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相关论文: Graphene Synthesis via the High Pressure - High Te…

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We report that graphene films with thickness ranging from 1 to 7 layers can be controllably synthesized on the surface of polycrystalline copper by a chemical vapour deposition method. The number of layers of graphene is controlled…

The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atomic force microscopy, low-energy electron microscopy, and…

材料科学 · 物理学 2015-05-30 N. Srivastava , Guowei He , Luxmi , P. C. Mende , R. M. Feenstra , Yugang Sun

Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control over the properties of high-quality graphene synthesized on Ge…

材料科学 · 物理学 2018-05-04 A. M. Scaparro , V. Miseikis , C. Coletti , A. Notargiacomo , M. Pea , M. De Seta , L. Di Gaspare

The growth of graphene by catalytic decomposition of ethylene on Cu(111) in an ultra-high vacuum system was investigated with low energy electron diffraction, low energy electron microscopy, and atomic force microscopy. Attempts to form a…

材料科学 · 物理学 2013-07-19 Zachary R. Robinson , Parul Tyagi , Tyler R. Mowll , James B. Hannon , Carl A. Ventrice

The outstanding electrical and mechanical properties of graphene make it very attractive for several applications, Nanoelectronics above all. However a reproducible and non destructive way to produce high quality, large-scale area, single…

介观与纳米尺度物理 · 物理学 2015-12-11 Marco Piazzi , Luca Croin , Ettore Vittone , Giampiero Amato

Non-conventional epitaxial techniques, such as van der Waals epitaxy (vdWE) and remote epitaxy, have attracted substantial attention in the semiconductor research community for their capability to repeatedly produce high-quality…

Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC, but by use of…

材料科学 · 物理学 2011-08-11 M. Copel , S. Oida , A. Kasry , A. A. Bol , J. B. Hannon , R. M. Tromp

A simple and effective stepwise-method has been developed to remove defects from the top graphene layers of highly orientated pyrolytic graphite. Using a combination of ozone exposure and moderately high temperature we have shown that a…

材料科学 · 物理学 2011-04-01 M. J. Webb , P. Palmgren , P. Pal , O. Karis , H. Grennberg

We synthesize large-area graphene via atmospheric-pressure (AP) chemical vapor deposition (CVD) on copper, and transfer to SiO2 wafers. In contrast to low-pressure (LP) CVD on copper, optical contrast and atomic force microscopy…

材料科学 · 物理学 2011-07-15 Daniel R. Lenski , Michael S. Fuhrer

Graphene- the wonder material has attracted a great deal of attention from varied fields of condensed matter physics, materials science and chemistry in recent times. Its 2D atomic layer structure and unique electronic band structure makes…

材料科学 · 物理学 2011-08-23 Deep Jariwala , Anchal Srivastava , Pulickel Ajayan

The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels…

It is significant to prepare large area of high quality graphene for the study of the characteristics of graphene and the research of the nano-devices based on graphene. This paper summarizes the experiment progresses and mechanism of…

介观与纳米尺度物理 · 物理学 2012-03-01 Tian Yuan , Zhao Qian-Ying , Hu Jing , Zhou Chen , Miao Ling , Jiang Jian-Jun

The thermal decomposition of SiC surface provides, perhaps, the most promising method for the epitaxial growth of graphene on a material useful in the electronics platform. Currently, efforts are focused on a reliable method for the growth…

We show that by using an original method, bulk graphite can be bonded onto borosilicate glass or potentially any insulating substrate with ionic conductivity and then cleaved off to leave single or few layer graphene on the substrate,…

材料科学 · 物理学 2009-04-06 Abhay Shukla , Rakesh Kumar , Javed Mazher , Adrian Balan

The current method of growing large-area graphene on Cu surfaces (polycrystalline foils and thin films) and its transfer to arbitrary substrates is technologically attractive. However, the quality of graphene can be improved significantly…

In this work we demonstrate the synthesis of millimetre-sized single-crystals of graphene, achievable in a commercially-available cold-wall CVD reactor, and several different approaches to transfer it from the growth substrate to a target…

材料科学 · 物理学 2017-11-15 Vaidotas Miseikis , Shaohua Xiang , Stefano Roddaro , Stefan Heun , Camilla Coletti

Chemical Vapor Deposition (CVD) of graphene on copper is one of the most efficient technologies for producing high quality graphene for large areas. Nevertheless, still high pressures and big quantities of precursor gas are currently…

材料科学 · 物理学 2014-09-18 V-M. Freire , A. Ramirez , E. Pascual , E. Bertran , J-L. Andujar

Synthesis of graphene with reduced use of chemical reagents is essential for manufacturing scale-up and to control its structure and properties. In this paper, we report on a novel chemical-free mechanism of graphene exfoliation from…

A novel route for the synthesis of large area graphene by an indigenously built electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD) setup has been reported in this work. A unique 2.45 GHz permanent magnet…

材料科学 · 物理学 2019-01-23 S. Karmakar , S. K. Kundu , G. S. Taki

Graphene is an intriguing material with properties that are distinct from those of other graphitic systems. The first samples of pristine graphene were obtained by peeling off and epitaxial growth. Recently, the chemical reduction of…

材料科学 · 物理学 2015-05-13 Xiaolin Li , Guangyu Zhang , Xuedong Bai , Xiaoming Sun , Xinran Wang , Enge Wang , Hongjie Dai