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The scattering of lattice excitations (phonons) with the photoexcited charge carriers is of a major concern in optoelectronic devices. Here, the resonant Raman scattering will be utilized to study an exciton-phonon interaction in GaN…

Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and…

The results of micro-Raman scattering measurements performed on three different ``graphitic'' materials: micro-structured disks of highly oriented pyrolytic graphite, graphene multi-layers thermally decomposed from carbon terminated surface…

介观与纳米尺度物理 · 物理学 2009-11-13 C. Faugeras , A. Nerriere , M. Potemski , A. Mahmood , E. Dujardin , C. Berger , W. A. de Heer

There are several growing methods for graphene. In this study, the growth of graphene-like clusters on the SiC wafers is done by annealing the wafers in a vacuum evaporation system equipped with a heating source accessory. For evaluating…

介观与纳米尺度物理 · 物理学 2021-05-31 Seyed Sajad Sadeghi , Hamidreza Simchi

We analyze the electrostatic interactions between a single graphene layer and a SiO$_2$ susbtrate, and other materials which may exist in its environment. We obtain that the leading effects arise from the polar modes at the SiO$_2$ surface,…

材料科学 · 物理学 2009-11-13 J. Sabio , C. Seoanez , S. Fratini , F. Guinea , A. H. Castro Neto , F. Sols

We show that it is possible to prepare and identify ultra--thin sheets of graphene on crystalline substrates such as SrTiO$_3$, TiO$_2$, Al$_2$O$_3$ and CaF$_2$ by standard techniques (mechanical exfoliation, optical and atomic force…

材料科学 · 物理学 2009-11-06 S. Akcoeltekin , M. El Kharrazi , B. Koehler , A. Lorke , M. Schleberger

The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect…

We study theoretically the Raman spectrum of the rotated double-layer graphene, consisting of two graphene layers rotated with respect to each other by an arbitrary angle \theta. We find a relatively simple dependence of the Raman G peak…

介观与纳米尺度物理 · 物理学 2013-11-05 Sinisa Coh , Liang Z. Tan , Steven G. Louie , Marvin L. Cohen

We have studied the magneto-optical spectra of ultrathin magnetic films deposited on Si substrates coated with an oxide layer (SiOx). We find that the Kerr rotation angle and the ellipticity of ~1 nm thick CoFeB thin films, almost…

介观与纳米尺度物理 · 物理学 2018-01-18 Satoshi Sumi , Hiroyuki Awano , Masamitsu Hayashi

The experimental Raman spectra of graphene exhibit a few intense two-phonon bands, which are enhanced through double-resonant scattering processes. Though there are many theoretical papers on this topic, none of them predicts the spectra…

介观与纳米尺度物理 · 物理学 2014-12-17 Valentin N. Popov , Philippe Lambin

Correct defect quantification in graphene samples is crucial both for fundamental and applied re-search. Raman spectroscopy represents the most widely used tool to identify defects in graphene. However, despite its extreme importance the…

材料科学 · 物理学 2021-07-22 Sara D. Costa , Johan Ek Weis , Otakar Frank , Martin Kalbac

Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide…

介观与纳米尺度物理 · 物理学 2016-05-18 G. Lupina , C. Strobel , J. Dabrowski , G. Lippert , J. Kitzmann , H. M. Krause , Ch. Wenger , M. Lukosius , A. Wolff , M. Albert , J. W. Bartha

We use anhydrous ferric chloride (FeCl3) to intercalate graphite flakes consisting of 2 to 4 graphene layers and to dope graphene monolayers. The intercalant, staging, stability and doping of the resulting intercalation compounds (ICs) are…

材料科学 · 物理学 2011-06-07 W. J. Zhao , P. H. Tan , J. Liu , A. C. Ferrari

Intermediate frequency range (511 - 514 cm-1) Si phonons in Si-SiO2 nanocomposites are shown to have contribution from both core1 and surface/interface1 Si phonons, where, ratio of contribution of the two depends on the size of a Si…

介观与纳米尺度物理 · 物理学 2015-03-13 Ekta Rani , Alka Ingale , A. Chaturvedi , M. P. Joshi , L. M. Kukreja

The vibrational and electronic properties of 2-dimensinal (2D) materials can be efficiently tuned by external strain due to their good stretchability. Resonant Raman spectroscopy is a versatile tool to study the physics of phonons,…

The Raman shifts of nanocrystalline GaSb excited by an Ar+ ion laser of wavelengths 514.5, 496.5, 488.0, 476.5, and 457.9 nm are studied by experiment and explained by phonon confinement, tensile stress, resonance Raman scattering and…

Graphene has been recognized as an attractive two-dimensional material for fundamental research and wide applications in electronic and photonic devices owing to its unique properties. The technologies to modulate the properties of graphene…

光学 · 物理学 2016-01-26 Yang Tan , Zhen Shang , Shavkat Akhmadaliev , Shengqiang Zhou , Feng Chen

An analytical study is presented of the double resonant Raman scattering process in graphene, responsible for the D and D$^{\prime}$ features in the Raman spectra. This work yields analytical expressions for the D and D$^{\prime}$…

介观与纳米尺度物理 · 物理学 2015-01-29 J. F. Rodriguez-Nieva , E. B. Barros , R. Saito , M. S. Dresselhaus

Nanofibers functionalized by metal nanostructures and particles are exploited as effective flexible substrates for SERS analysis. Their complex three-dimensional structure may provide Raman signals enhanced by orders of magnitude compared…

材料科学 · 物理学 2016-03-16 A. Camposeo , D. Spadaro , D. Magrì , M. Moffa , P. G. Gucciardi , L. Persano , O. M. Maragò , D. Pisignano

Though graphene has been intensively studied by Raman spectroscopy, in this letter, we report a study of second-order overtone and combinational Raman modes in an unexplored range of 1690-2150 cm-1 in nonsuspended commensurate (AB-stacked),…

材料科学 · 物理学 2010-10-19 Chunxiao Cong , Ting Yu , Riichiro Saito