相关论文: Free-running InGaAs/InP Avalanche Photodiode with …
Avalanche photodiodes are widely used as practical detectors of single photons.1 Although conventional devices respond to one or more photons, they cannot resolve the number in the incident pulse or short time interval. However, such photon…
Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 10^5 and linearity range improved an order of magnitude compared to known similar devices. A distinctive feature of the new device is…
We report a demonstration of quantum key distribution (QKD) at GHz clock rates with InGaAs avalanche photodiodes (APDs) operating in a self-differencing mode. Such a mode of operation allows detection of extremely weak avalanches so that…
We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn…
We report on the design and performance of a mixed-signal application specific integrated circuit (ASIC) dedicated to avalanche photodiodes (APDs) in order to detect hard X-ray emissions in a wide energy band onboard the International Space…
High-frequency sine wave gating (SWG) InGaAs/InP single-photon detectors (SPDs) are widely used for synchronous near-infrared single-photon detection. For practical use, the size of SPD is one of the most concerning features for system…
Integrated quantum photonics, which allows for the development and implementation of chip-scale devices, is recognized as a key enabling technology on the road towards scalable quantum networking schemes. However, many state-of-the-art…
Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric…
This work presents stochastic approaches to model the counting behavior of actively quenched single-photon avalanche diodes (SPADs) subjected to continuous-wave constant illumination. We present both analytical expressions and simulation…
We present the design, construction, and performance of a facility for the characterization of Silicon Avalanche Photodiodes in the operating temperature range between -2 $^\circ$C and 25 $^\circ$C. The system can simultaneously measure up…
Single-photon cameras (SPCs) are emerging as sensors of choice for various challenging imaging applications. One class of SPCs based on the single-photon avalanche diode (SPAD) detects individual photons using an avalanche process; the raw…
High-frequency gating InGaAs/InP single-photon detectors (SPDs) are widely used for applications requiring single-photon detection in the near-infrared region such as quantum key distribution. Reducing SPD size is highly desired for…
Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated…
We characterize a new commercial, back-illuminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose of photon counting. We show that for this sensor a…
Single-photon detectors (SPDs) are widely used in applications requiring extremely weak light detection. In the near-infrared region, SPDs based on InGaAs/InP single-photon avalanche diodes (SPADs) are the primary candidates for practical…
We implement an InGaAs/InP single-photon avalanche diode (SPAD) for single-photon detection with the fastest gating frequency reported so far, of 2.23 GHz, which approaches the limit given by the bandwidth of the SPAD - 2.5 GHz. We propose…
In this work we investigate operation in the Geiger mode of the new single photon avalanche photo diode (SPAD) SAP500 manufactured by Laser Components. This SPAD is sensitive in the range 400-1000nm and has a conventional reach-through…
The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a…
The next-generation ALICE 3 experiment at the High-Luminosity LHC (HL-LHC) requires detector technologies that combine fine spatial resolution, fast timing, and an extremely low material budget. This paper presents the design,…
We characterize the temporal evolution of the afterpulse probability in a free-running negative feedback avalanche diode (NFAD) over an extended range, from $\sim$300 ns to $\sim$1 ms. This is possible thanks to an extremely low dark count…