Microchannel avalanche photodiode with wide linearity range

Z. Sadygov; A. Olshevski; N. Anphimov; T. Bokova; V. Chalyshev; I. Chirikov-Zorin; A. Dovlatov; Z. Krumshtein; R. Mekhtieva; R. Mukhtarov; V. Shukurova; M. Troitskaya; V. Zhezher

doi:10.1134/S106378501006012X

Microchannel avalanche photodiode with wide linearity range

Instrumentation and Detectors 2015-05-18 v1

Authors: Z. Sadygov , A. Olshevski , N. Anphimov , T. Bokova , V. Chalyshev , I. Chirikov-Zorin , A. Dovlatov , Z. Krumshtein , R. Mekhtieva , R. Mukhtarov , V. Shukurova , M. Troitskaya , V. Zhezher

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Abstract

Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 10^5 and linearity range improved an order of magnitude compared to known similar devices. A distinctive feature of the new device is a directly biased p-n junction under each pixel which plays role of an individual quenching resistor. This allows increasing pixel density up to 40000 per mm^2 and making entire device area sensitive.

Keywords

single-photon avalanche diodes

Cite

@article{arxiv.1001.3050,
  title  = {Microchannel avalanche photodiode with wide linearity range},
  author = {Z. Sadygov and A. Olshevski and N. Anphimov and T. Bokova and V. Chalyshev and I. Chirikov-Zorin and A. Dovlatov and Z. Krumshtein and R. Mekhtieva and R. Mukhtarov and V. Shukurova and M. Troitskaya and V. Zhezher},
  journal= {arXiv preprint arXiv:1001.3050},
  year   = {2015}
}

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Submitted to Journal of Technical Physics

Microchannel avalanche photodiode with wide linearity range

Abstract

Keywords

Cite

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