相关论文: Free-running InGaAs/InP Avalanche Photodiode with …
Aiming to measure the difference in arrival times of two coincident gamma-photons with an accuracy in the order of 200 ps, time-of-flight positron emission tomography systems commonly employ silicon photomultipliers (SiPMs) and…
Geigermode avalanche photodiodes (G-APD) are novel photodetectors, which can detect single photons. This type of diodes might become an alternative to photomultipliers (PMT) in next-generation Imaging Air Cherenkov Telescopes. Prospects,…
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are…
A novel concept for ion blocking in gas-avalanche detectors was developed, comprising cascaded micro-hole electron multipliers with patterned electrodes for ion defocusing. This leads to ion blocking at the 10^{-4} level, in DC mode, in…
InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the second and…
Free space optical communication systems with extremely high detector sensitivities are attractive for various applications with low size, weight and power requirements. For these practical systems, integrated hardware elements with small…
We present an analog silicon photomultiplier (SiPM) based on a standard 55 nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16$\times$16 single-photon avalanche diodes (SPADs) and measures 0.29$\times$0.32 mm$^2$. Each SPAD…
We demonstrate multiphoton discrimination at telecom wavelength with the readout frequency of 40 Hz by charge integration photon detector (CIPD). The CIPD consists of an InGaAs pin photodiode and a GaAs junction field effect transistor as a…
We report the routing of quantum light emitted by self-assembled InGaAs quantum dots (QDs) into the optical modes of a GaAs ridge waveguide and its efficient detection on-chip via evanescent coupling to NbN superconducting nanowire single…
Photonic quantum technologies promise a revolution of the world of information processing, from simulation and computing to communication and sensing, thanks to the many advantages of exploiting single photons as quantum information…
We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of…
We have developed an avalanche transistor-based pulse generator for driving the photocathode of an image intensifier, which comprises a mainly capacitive load on the order of 100 pF. The circuit produces flat-top pulses with rise time of 2…
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp…
Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device…
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks.…
The integrated optical circuit is a promising architecture for the realization of complex quantum optical states and information networks. One element that is required for many of these applications is a high-efficiency photon detector…
The spectacular success of silicon-based photonic integrated circuits (PICs) in the past decade naturally begs the question of whether similar fabrication procedures can be applied to other material platforms with more desirable optical…
We demonstrate experimentally the realization and the characterization of a chip scale integrated photodetector for the visible and the near infrared spectral regime based on the integration of a MoSe2/WS2 heterojunction on top of a silicon…
Silicon Photomultipliers (SiPMs) have been widely adopted for photon detection in next-generation dark matter and neutrino detection experiments. Internal crosstalk, resulting from secondary photons produced during charge avalanches, is a…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…