相关论文: Current-induced magnetization switching in MgO bar…

We theoretically investigate two different magnetic tunneling junctions (MTJs) with semiconductor barriers, CuInSe${}_{2}$ (CIS) and CuGaSe${}_{2}$ (CGS), which are the terminal compounds of recently reported mixed semiconductor barrier,…

Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20…

Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…

Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the…

It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tunnel magnetoresistance (TMR). To explore the essential…

We investigate the tunneling magnetoresistance (TMR) effect using the lattice models which describe the magnetic tunnel junctions (MTJ). First, taking a conventional ferromagnetic MTJ as an example, we show that the product of the local…

This study investigates the stability of skyrmions and biskyrmions in perpendicular magnetic tunneling junctions with a thick CoFeB/Ta/CoFeB free layer. The samples showed a magnetoresistance of ~ 41% when annealed at 230 {\deg}C. Magnetic…

Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…

One candidate for ultimate non-volatile memory with ultralow power consumption is magneto-resistive random-access memory (VC-MRAM). To develop VC-MRAM, it is important to fabricate high-performance magnetic tunnel junctions (MTJs), which…

Planar current-induced magnetization switching (CIMS) driven by spin-orbit torque (SOT) requires an in-plane uniaxial magnetic anisotropy (UMA), which can be induced by oblique-angle sputter deposition of the heavy-metal underlayer in…

Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…

To develop new devices based on synthetic ferrimagnetic heterostructures, understanding the material's physical properties is pivotal. Here, the induced magnetic moment (IMM), magnetic exchange coupling, and spin textures are investigated…

Topological spin textures can be found in both two-dimensional and three-dimensional nanostructures, which are of great importance to advanced spintronic applications. Here we report the current-induced skyrmion tube dynamics in…

Synthetic antiferromagnetic skyrmions (SAFsk) are nanoscale, topologically protected spin textures with strong potential for spintronic technologies because of their high stability and the absence of the skyrmion Hall effect. However,…

Co(x nm, x=10nm or 40nm)/Cu(5nm)/Co(2.5nm) layers were deposited between copper electrodes in SiO2 vias. Magnetic states, and the corresponding resistance states, of these devices were switched by electric currents perpendicular to the…

We report direct experimental evidence of room temperature spin filtering in magnetic tunnel junctions (MTJs) containing CoFe2O4 tunnel barriers via tunneling magnetoresistance (TMR) measurements.…

We propose an electrically driven spin injector into normal metals and semiconductors, which is based on a magnetic tunnel junction (MTJ) subjected to a microwave voltage. Efficient functioning of such an injector is provided by…

We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows…

Synthetic ferrimagnetic (SFiM) multilayers offer a versatile platform for hosting skyrmions with tunable magnetic properties, combining the advantages of ferromagnets and antiferromagnets. Unlike synthetic antiferromagnets, SFiMs retain a…

We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data…