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相关论文: Few layers graphene on 6H-SiC(000-1): an STM study

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Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform must conform to stringent purity standards. Here, we…

Moir\'e materials host a wealth of intertwined correlated and topological states of matter, all arising from flat electronic bands with nontrivial quantum geometry. A prominent example is the family of alternating-twist magic-angle graphene…

Vertical stacking of atomically thin materials offers a large platform for realizing novel properties enabled by proximity effects and moir\'e patterns. Here we focus on mechanically assembled heterostructures of graphene and ReS$_2$, a van…

材料科学 · 物理学 2020-10-16 Ryan Plumadore , Mohammed M. Al Ezzi , Shaffique Adam , Adina Luican-Mayer

The electronic structure of few-layer graphene (FLG) samples with crystalline order was investigated experimentally by infrared absorption spectroscopy for photon energies ranging from 0.2 - 1 eV. Distinct optical conductivity spectra were…

材料科学 · 物理学 2015-05-18 Kin Fai Mak , Jie Shan , Tony F. Heinz

Graphene-derived nanomaterials are emerging as ideal candidates for postsilicon electronics. Elucidating the electronic interaction between an insulating substrate and few-layer graphene (FLG) films is crucial for device applications. Here,…

材料科学 · 物理学 2009-05-08 Sujit S. Datta , Douglas R. Strachan , E. J. Mele , A. T. Charlie Johnson

Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy…

We present a systematical study via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) on the effect of the exposure of Lithium (Li) on graphene on silicon carbide (SiC). We have investigated Li deposition both…

材料科学 · 物理学 2017-09-29 Sara Fiori , Yuya Murata , Stefano Veronesi , Antonio Rossi , Camilla Coletti , Stefan Heun

In this study the growth process of epitaxial graphene on SiC was investigated systematically. The transition from the initial buffer layer growth to the formation of the first monolayer graphene domains was investigated by various…

We carry out a computational study on the geometric and electronic properties of multi-layers of silicene in different stacking configurations using a state-of-art abinitio density functional theory based calculations. In this work we…

材料科学 · 物理学 2015-02-26 C. Kamal , Aparna Chakrabarti , Arup Banerjee , S. K. Deb

This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The…

材料科学 · 物理学 2018-05-03 D. Convertino , A. Rossi , V. Miseikis , V. Piazza , C. Coletti

The inability to grow large well ordered graphene with a specific number of layers on SiC(0001) is well known. The growth involves several competing processes (Si desorption, carbon diffusion, island nucleation etc.), and because of the…

材料科学 · 物理学 2008-09-23 M. Hupalo , E. Conrad , M. C. Tringides

The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interface between the graphene and the SiC is found to be different…

介观与纳米尺度物理 · 物理学 2015-06-05 Guowei He , N. Srivastava , R. M. Feenstra

The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial…

The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be altered by the presence of a scanning tunneling microscope (STM) tip used to probe top-layer electronic properties, and by a…

介观与纳米尺度物理 · 物理学 2011-04-20 Hongki Min , S. Adam , Young Jae Song , Joseph A. Stroscio , M. D. Stiles , A. H. MacDonald

Scanning tunneling images of carbon nanotubes frequently show electron distributions which break the local sixfold symmetry of the graphene sheet. We present a theory of these images which relates these anisotropies to the off diagonal…

介观与纳米尺度物理 · 物理学 2009-10-31 C. L. Kane , E. J. Mele

The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO2, is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001)…

介观与纳米尺度物理 · 物理学 2011-02-18 Nicola Ferralis , Roya Maboudian , Carlo Carraro

Horizontal shifts in the top layer of highly oriented pyrolytic graphite, induced by a scanning tunneling microscope (STM) tip, are presented. Excellent agreement is found between STM images and those simulated using density functional…

介观与纳米尺度物理 · 物理学 2015-02-05 P. Xu , Y. Yang , D. Qi , S. D. Barber , M. L. Ackerman , J. K. Schoelz , T. B. Bothwell , S. Barraza-Lopez , L. Bellaiche , P. M. Thibado

Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review the recent results on the Raman spectroscopy and imaging of graphene. Raman spectroscopy and…

材料科学 · 物理学 2008-10-17 Zhen hua Ni , Ying ying Wang , Ting Yu , Ze xiang Shen

Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now,…

Graphene is a 2D material that displays excellent electronic transport properties with prospective applications in many fields. Inducing and controlling magnetism in the graphene layer, for instance by proximity of magnetic materials, may…