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相关论文: Effect of Electric Field on One-Dimensional Insula…

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We perform density matrix renormalization group (DMRG) calculations extensively on one-dimensional chains with on site (U) as well as nearest neighbour (V) Coulomb repulsions. The calculations are carried out in full parameter space with…

强关联电子 · 物理学 2009-11-13 Sudipta Dutta , Swapan K. Pati

We investigate the dielectric breakdown of mesoscopic Mott insulators, a phenomenon where a strong electric field destabilizes the insulating state, resulting in a transition to a metallic phase. Using the Landau-Zener formalism, which…

强关联电子 · 物理学 2025-07-09 Joan Triadú-Galí , Artur Garcia-Saez , Bruno Juliá-Díaz , Axel Pérez-Obiol

The one-dimensional extended Peierls-Hubbard model is studied at several band fillings using the density matrix renormalization group method. Results show that the ground state evolves from a Mott-Peierls insulator with a correlation gap at…

强关联电子 · 物理学 2009-10-30 Eric Jeckelmann

We study the tunneling phenomenon of a ladder system with a Peierls distortion in a magnetic flux, and the response of electrons the insulator is investigated when the tunneling current flows on one-dimensional gapped chains along the…

介观与纳米尺度物理 · 物理学 2018-10-08 Ryuji Takahashi , Naoyuki Sugimoto

We investigate the bias-induced insulator-metal transition in organic electronics devices, on the basis of the Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. The insulator-metal transition is…

材料科学 · 物理学 2009-11-11 J. H. Wei , Yijing Yan , S. J. Xie , L. M. Mei

We present a theoretical investigation of the voltage-driven metal insulator transition based on solving coupled Boltzmann and Hartree-Fock equations to determine the insulating gap and the electron distribution in a model system -- a one…

强关联电子 · 物理学 2018-12-03 Giuliano Chiriacò , Andrew J. Millis

Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group (DMRG). We show that the result can be recovered by a simple modification of the conventional Poisson's equation…

强关联电子 · 物理学 2009-11-11 Takashi Oka , Naoto Nagaosa

In order to clarify the physics of the crossover from a spin-density-wave (SDW) Mott insulator to a charge-density-wave (CDW) Peierls insulator in one-dimensional (1D) systems, we investigate the Hubbard-Holstein Hamiltonian at half filling…

强关联电子 · 物理学 2010-02-22 S. Ejima , H. Fehske

We have studied the Metal-Insulator like Transition (MIT) in lithium and beryllium ring-shaped clusters through ab initio Density Matrix Renormalization Group (DMRG) method. Performing accurate calculations for different interatomic…

强关联电子 · 物理学 2015-06-22 E. Fertitta , B. Paulus , G. Barcza , Ö. Legeza

Numerical studies on Mott transitions caused by the control of the ratio between bandwidth and electron-electron interaction ($U$) are reported. By using the recently proposed path-integral renormalization group(PIRG) algorithm, physical…

强关联电子 · 物理学 2007-05-23 Tsuyoshi Kashima , Masatoshi Imada

Non-linear transport of electrons in strong electric fields, as typified by dielectric breakdown, is re-formulated in terms of the ground-state decay rate originally studied by Schwinger in non-linear QED. We discuss the effect of electron…

强关联电子 · 物理学 2009-11-11 Takashi Oka , Hideo Aoki

We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

强关联电子 · 物理学 2025-10-28 Georg Rohringer , Anton A. Markov

The ground state properties of a paramagnetic Mott insulator are investigated in the presence of an external electrical field using the inhomogeneous Gutzwiller approximation for a single band Hubbard model in a slab geometry. The metal…

强关联电子 · 物理学 2015-05-30 D. Nasr Esfahani , L. Covaci , F. M. Peeters

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…

强关联电子 · 物理学 2009-10-30 Dragana Popovic , A. B. Fowler , S. Washburn

We present a density-matrix embedding theory (DMET) study of the one-dimensional Hubbard-Holstein model, which is paradigmatic for the interplay of electron-electron and electron-phonon interactions. Analyzing the single-particle excitation…

For more than a decade it was widely accepted that two-dimensional electrons are insulating at zero temperature and at zero magnetic-field. Experimentally it was demonstrated that, when placed in a strong perpendicular magnetic field, the…

凝聚态物理 · 物理学 2007-05-23 Y. Hanein , D. Shahar , Hadas Shtrikman , J. Yoon , C. C. Li , D. C. Tsui

It is shown that a sufficiently strong external electric field causes a decrease in the transition temperature of ferroelectric, antiferroelectric, and metal-insulator transitions. The temperature dependence of the critical electric field…

统计力学 · 物理学 2008-06-02 Fedor V. Prigara

We study the one-dimensional Holstein model with spin-1/2 electrons at half-filling. Ground state properties are calculated for long chains with great accuracy using the density matrix renormalization group method and extrapolated to the…

凝聚态物理 · 物理学 2009-10-31 Eric Jeckelmann , Chunli Zhang , Steven R. White

The effect of electric field, applied on systems in the nanoscale regime has attracted a lot of research in recent times. We highlight some of the recent results in the field of single molecule electronics and then move on to focus on some…

材料科学 · 物理学 2008-10-11 S. Lakshmi , Sudipta Dutta , Swapan K. Pati

We study the effects of opening of the band gap on the double exchange ferromagnetism. Applying the density-matrix renormalization group method and an analytical expansion from the dimer limit to the one-dimensional double exchange model,…

强关联电子 · 物理学 2012-10-11 S. Nishimoto , Y. Ohta
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