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We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (110) plane. Apart from atomically flat areas, we also observe…

材料科学 · 物理学 2007-05-23 A. Depuydt , C. Van Haesendonck , N. S. Maslova , V. I. Panov , V. V. Rakov , S. V. Savinov

The properties of InAs (110) surfaces have been investigated by means of low-temperature scanning tunneling microscopy and spectroscopy. A technique for ex-situ sulphur passivation has been developed to form an accumulation layer on such a…

介观与纳米尺度物理 · 物理学 2009-09-25 L. Canali , J. W. G. Wildoer , O. Kerkhof , L. P. Kouwenhoven

Scanning tunneling microscopy using a CO-functionalized tip is combined with simulations to explore the impact of the CO tilt angle on topographies of a single Cu atom and CO molecule adsorbed on Cu(111). Images of the Cu atom acquired with…

材料科学 · 物理学 2024-09-24 Ivan Abilio , Nicolas Néel , Jörg Kröger , Krisztián Palotás

We present a theory for the pseudo-gap state recently observed at the LaAlO3/SrTiO3 interface, based on superconducting islands embedded in a metallic background. Superconductivity within each island is BCS-like, and the local critical…

超导电性 · 物理学 2015-02-18 D. Bucheli , S. Caprara , M. Grilli

Low-temperature scanning tunneling spectroscopy allows to probe the electronic properties of clusters at surfaces with unprecedented accuracy. By means of quantum transport theory, using realistic tunneling tips, we obtain conductance…

其他凝聚态物理 · 物理学 2011-11-09 Mario De Menech , Ulf Saalmann , Martin E. Garcia

We have performed voltage dependent imaging and spatially resolved spectroscopy on the (110) surface of Te doped GaAs single crystals with a low temperature scanning tunneling microscope (STM). A large fraction of the observed defects are…

材料科学 · 物理学 2009-10-31 A. Depuydt , C. Van Haesendonck , N. S. Maslova , V. I. Panov , S. V. Savinov , P. I. Arseev

Clusters containing a single magnetic impurity were investigated by scanning tunneling microscopy, spectroscopy, and ab initio electronic structure calculations. The Kondo temperature of a Co atom embedded in Cu clusters on Cu(111) exhibits…

材料科学 · 物理学 2009-11-13 N. Neel , J. Kroeger , R. Berndt , T. Wehling , A. Lichtenstein , M. I. Katsnelson

Since more than twenty years it is known that deposition of Ag onto Si(111)-(7\times7) leads under certain conditions to the formation of so-called "ring-like" clusters, that are particularly stable among small clusters. In order to resolve…

Electronic nematic phases have been proposed to occur in various correlated electron systems and were recently claimed to have been detected in scanning tunneling microscopy (STM) conductance maps of the pseudogap states of the cuprate…

Electron tunneling through small metallic islands with low capacitance is studied. The large charging energy in these systems is responsible for nonperturbative Coulomb blockade effects. We further consider the effect of electron…

凝聚态物理 · 物理学 2016-08-31 Jürgen König , Herbert Schoeller , Gerd Schön , Rosario Fazio

The formation of a novel surface reconstruction upon Co deposition on freshly cleaved Ge(111)2x1 surfaces is studied by means of scanning tunneling microscopy (STM) at low temperature. The deposited Co atoms are immobile at substrate…

材料科学 · 物理学 2015-06-03 D. A. Muzychenko , K. Schouteden , V. I. Panov , C. Van Haesendonck

In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires…

介观与纳米尺度物理 · 物理学 2015-06-19 A. A. Zhukov , Ch. Volk , A. Winden , H. Hardtdegen , Th. Schaepers

Tunneling spectroscopy of InAs nanocrystals deposited on graphite was measured using scanning tunneling microscopy, in a double-barrier tunnel-junction configuration. The effect of the junction symmetry on the tunneling spectra is studied…

介观与纳米尺度物理 · 物理学 2009-11-07 David Katz , Oded Millo , Shi-Hai Kan , Uri Banin

In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron…

介观与纳米尺度物理 · 物理学 2007-05-23 L. H. Yu , Z. K. Keane , J. W. Ciszek , L. Cheng , M. P. Stewart , J. M. Tour , D. Natelson

Spatially resolved tunneling spectroscopic studies of colossal magnetoresistive (CMR) manganite $\rm La_{0.7}Ca_{0.3}MnO_3$ (LCMO) epitaxial films on $\rm (LaAlO_3)_{0.3}(Sr_2AlTaO_6)_{0.7}$ substrate are investigated as functions of…

强关联电子 · 物理学 2010-12-06 C. R. Hughes , J. Shi , A. D. Beyer , N. -C. Yeh

We present a theoretical study for the scanning tunneling microscopy (STM) spectra of surface-supported magnetic nanostructures, incorporating strong correlation effects. As concrete examples, we study Co and Mn adatoms on the Cu(111)…

强关联电子 · 物理学 2016-03-22 Hung T. Dang , Manuel dos Santos Dias , Ansgar Liebsch , Samir Lounis

We present scanning tunneling microscopy measurements on a cleaved surface of the recently discovered superconductor NdO$_{0.7}$F$_{0.3}$BiS$_{2}$ with a transition temperature ($T_{\mathrm{c}}$) of 5.1 K.Tunneling spectra at 4.2 K (below…

超导电性 · 物理学 2014-10-20 T. Machida , Y. Fujisawa , M. Nagao , S. Demura , K. Deguchi , Y. Mizuguchi , Y. Takano , H. Sakata

Current imaging scanning tunneling microscopy is used to observe the electronic wavefunctions in InAs/ZnSe core/shell nanocrystals. Images taken at a bias corresponding to the s conduction band state show that it is localized in the central…

介观与纳米尺度物理 · 物理学 2009-11-07 Oded Millo , David Katz , YunWei Cao , Uri Banin

The electronic properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended atomic-like basis set. We calculate the surface electronic band structure which is studied as a…

材料科学 · 物理学 2007-05-23 X. Lopez-Lozano , Cecilia Noguez , L. Meza-Montes

With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here…

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