相关论文: Intervalley splittings of Si quantum wells

Conventionally, perturbative and non-perturbative calculations are performed independently. In this paper, valleys in the configuration space in quantum mechanics are investigated as a way to treat them in a unified manner. All the known…

Using the formalism of extended $N=4$ supersymmetric quantum mechanics we consider the procedure of the construction of multi--well potentials. We demostrate the form--invariance of Hamiltonians entering the supermultiplet, using the…

Within the framework of fractional quantum mechanics, an exact solution has been found for the energy spectrum of a quantum particle confined in a quantum well - a symmetric one-dimensional finite potential well. A simple graphical…

The notoriously low and fluctuating valley splitting is one of the key challenges for electron spin qubits in silicon (Si), limiting the scalability of Si-based quantum processors. In silicon-germanium (SiGe) heterostructures, the problem…

An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a…

The quantum valley Hall effect (QVHE) has been observed in a variety of experimental setups, both quantum and classical. While extremely promising for applications, one should be reminded that QVHE is not an exact topological phenomenon and…

The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt…

A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the…

We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron…

We analyze here the energy states and associated wave functions available to a particle acted upon by a delta function potential of arbitrary strength and sign and fixed anywhere within a one-dimensional infinite well. We consider how the…

We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes almost 100% modulation of the Shubnikov de Haas oscillations…

Breakdown of the Quantum Hall Effect at high values of injected current is explained as a consequence of an abrupt formation of a metallic ``river'' percolating from one edge of the sample to the other. Such river is formed when lakes of…

We measure the effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we change the conduction-band valley occupation and the spin polarization via the application of strain and magnetic field,…

We develop a multi-valley effective mass theory for substitutional donors in silicon in an inhomogeneous environment. Valley-orbit coupling is treated perturbatively. We apply the theory to the Stark effect in Si:P. The method becomes more…

A theory of the circular photogalvanic effect caused by spin splitting in quantum wells is developed. Direct interband transitions between the hole and electron size-quantized subbands are considered. It is shown that the photocurrent value…

The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for val-leytronics devices. In silicon MOSFETs, the…

We develop here a theory of the electronic properties of a finite number of valence holes in gated WSe$_2$ quantum dots, considering the influence of spin, valley, electronic orbitals, and many-body interactions. The single-particle wave…

The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy…

Using techniques of effective field theory, we consider the thermodynamical properties of a dilute two-dimensional plasma interacting via a $1/r$ potential. The first one-loop correction to the partition function is already logarithmically…

Using the formalism of extended N=4 supersymmetric quantum mechanics we consider the procedure of the construction of multi-well potentials. We demonstrate the form-invariance of Hamiltonians entering the supermultiplet, using the presented…