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相关论文: Spin-Dependent Scattering off Neutral Antimony Don…

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The scattering of conduction electrons off neutral donors depends sensitively on the relative orientation of their spin states. We present a theory of spin-dependent scattering in the two dimensional electron gas (2DEG) of field effect…

介观与纳米尺度物理 · 物理学 2009-07-25 Rogerio de Sousa , Cheuk Chi Lo , Jeffrey Bokor

Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal…

Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing.…

介观与纳米尺度物理 · 物理学 2015-06-23 C. C. Lo , M. Urdampilleta , P. Ross , M. F. Gonzalez-Zalba , J. Mansir , S. A. Lyon , M. L. W. Thewalt , J. J. L. Morton

We have measured the electrically detected magnetic resonance of channel-implanted donors in silicon field-effect transistors in resonant X- ($9.7\:$GHz) and W-band ($94\:$GHz) microwave cavities, with corresponding Zeeman fields of…

介观与纳米尺度物理 · 物理学 2015-05-20 C. C. Lo , V. Lang , R. E. George , J. J. L. Morton , A. M. Tyryshkin , S. A. Lyon , J. Bokor , T. Schenkel

In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance…

介观与纳米尺度物理 · 物理学 2018-04-18 J. J. Pla , A. Bienfait , G. Pica , J. Mansir , F. A. Mohiyaddin , Z. Zeng , Y. M. Niquet , A. Morello , T. Schenkel , J. J. L. Morton , P. Bertet

We studied electrical transport in magnetic semiconductors, which is determined by scattering of free carriers off localized magnetic moments. We calculated the scattering time and the mobility of the majority and minority-spin carriers…

材料科学 · 物理学 2007-05-23 M. Foygel A. G. Petukhov

We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of…

介观与纳米尺度物理 · 物理学 2009-09-11 A. Morello , C. C. Escott , H. Huebl , L. H. Willems van Beveren , L. C. L. Hollenberg , D. N. Jamieson , A. S. Dzurak , R. G. Clark

Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear…

Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and…

Spectral diffusion arising from $^{29}$Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the…

Scattering of electrons from chiral spin textures such as the skyrmions is an emerging research area due to its richness in topological quantum transport, which is significant for spintronic devices. We study the dynamical process of…

介观与纳米尺度物理 · 物理学 2026-03-03 Hareram Swain , Arijit Mandal , S. Satpathy , B. R. K. Nanda

Donor spin states in silicon are a promising candidate for quantum information processing. One possible donor spin readout mechanism is the bound exciton transition that can be excited optically and creates an electrical signal when it…

介观与纳米尺度物理 · 物理学 2023-02-02 Teemu Loippo , Antti Kanniainen , Juha T. Muhonen

An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline silicon and silicon dioxide at high magnetic field (B_0 ~ 8.5…

其他凝聚态物理 · 物理学 2008-07-07 D. R. McCamey , G. W. Morley , H. A. Seipel , L. C. Brunel , J. van Tol , C. Boehme

Bismuth donors ion-implanted in $^{28}$Si and $^\text{nat}$Si are studied using magnetic resonance spectroscopy based on spin dependent recombination. The hyperfine clock transition, at which the linewidth is significantly narrowed, is…

Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of…

In the presence of spin-orbit coupling, electron scattering off impurities depends on both spin and orbital angular momentum of electrons -- spin-orbit scattering. Although some transport properties are subject to spin-orbit scattering,…

介观与纳米尺度物理 · 物理学 2017-03-21 Y. Kohsaka , T. Machida , K. Iwaya , M. Kanou , T. Hanaguri , T. Sasagawa

It is shown that coherent spin motion of electron-hole pairs localized in band gap states of silicon can influence charge carrier recombination. Based on this effect, a readout concept for silicon based solid-state spin--quantum computers…

量子物理 · 物理学 2007-05-23 Christoph Boehme , Klaus Lips

We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin…

Electric dipole spin resonance is studied theoretically at a shallow donor formed in a nanowire with spin-orbit coupling in a magnetic field. Such system may represent a donor-based qubit. The single discrete energy level of the donor is…

介观与纳米尺度物理 · 物理学 2019-02-06 D. V. Khomitsky , E. A. Lavrukhina , E. Ya. Sherman

We study the amplitude for the spin-dependent WIMP scattering off nuclei by including the leading long-range two-body currents in the most important isovector contribution. We show that such effects are essentially independent of the target…

高能物理 - 唯象学 · 物理学 2013-01-09 P. C. Divari , J. D. Vergados
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