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We present electrically detected electron nuclear double resonance measurements of the nuclear spins of ionized and neutral arsenic donors in strained silicon. In addition to a reduction of the hyperfine coupling, we find significant…

We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multi-frequency pump-probe experiment in pulsed electrically…

材料科学 · 物理学 2010-02-02 Felix Hoehne , Hans Huebl , Bastian Galler , Martin Stutzmann , Martin S. Brandt

Electrically-detected magnetic resonance (EDMR) provides a highly sensitive method for reading out the state of donor spins in silicon. The technique relies on a spin-dependent recombination (SDR) process involving dopant spins that are…

介观与纳米尺度物理 · 物理学 2017-07-05 Lihuang Zhu , Kipp J. van Schooten , Mallory. L. Guy , Chandrasekhar Ramanathan

Neutron scattering is a powerful probe of strongly correlated systems. It can directly detect common phenomena such as magnetic order, and can be used to determine the coupling between magnetic moments through measurements of the spin-wave…

强关联电子 · 物理学 2014-10-02 Igor A. Zaliznyak , John M. Tranquada

The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…

介观与纳米尺度物理 · 物理学 2018-12-27 Duong Dinh Hiep , Masaaki Tanaka , Pham Nam Hai

We propose a technique for measuring the state of a single donor electron spin using a field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is facilitated by…

介观与纳米尺度物理 · 物理学 2009-11-13 Mohan Sarovar , Kevin C. Young , Thomas Schenkel , K. Birgitta Whaley

We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…

应用物理 · 物理学 2020-07-22 Shoichi Sato , Masaaki Tanaka , Ryosho Nakane

The nuclear spins of ionized donors in silicon have become an interesting quantum resource due to their very long coherence times. Their perfect isolation, however, comes at a price, since the absence of the donor electron makes the nuclear…

Polarized Compton scattering on the deuteron is studied in nuclear effective field theory. A set of tensor structures is introduced to define 12 independent Compton amplitudes. The scalar and vector amplitudes are calculated up to ${\cal…

核理论 · 物理学 2009-11-10 Jiunn-Wei Chen , Xiangdong Ji , Yingchuan Li

A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…

介观与纳米尺度物理 · 物理学 2007-05-23 J. P. McGuire , C. Ciuti , L. J. Sham

We report on the use of the polarized $^3$He gas filter and neutron resonant enhancement techniques for the measurement of spin-polarized diffuse neutron scattering due to ferromagnetic domains. A CoO/Co exchange biased bilayer was grown on…

材料科学 · 物理学 2007-05-23 F. Radu , A. Vorobiev , J. Major , H. Humblot , K. Westerholt , H. Zabel

We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual…

介观与纳米尺度物理 · 物理学 2015-05-13 CC Lo , A Persaud , S Dhuey , D Olynick , F Borondics , MC Martin , HA Bechtel , J Bokor , T Schenkel

Spin fluctuation and transition have always been one of central topics of magnetism and condensed matter science. Experimentally, the spin fluctuation is found transcribed onto scattering intensity in the neutron scattering process, which…

The high efficiency of a tunnel magnetic transistor as a source of spin-polarized electrons has been proven recently [X. Jiang {\it et al.}, Phys. Rev. Lett. {\bf 90}, 256603 (2003)]. A concept of this device based on an active group of hot…

介观与纳米尺度物理 · 物理学 2007-05-23 Emmanuel I. Rashba

Nature creates electrons with two values of the spin projection quantum number. In certain applications, it is important to filter electrons with one spin projection from the rest. Such filtering is not trivial, since spin-dependent…

介观与纳米尺度物理 · 物理学 2020-10-13 Areg Ghazaryan , Mikhail Lemeshko , Artem G. Volosniev

We study the effect of a static electric field on lithium donor spins in silicon. The anisotropy of the effective mass leads to the anisotropy of the quadratic Stark susceptibility, which we determined using the Dalgarno-Lewis exact…

介观与纳米尺度物理 · 物理学 2015-06-11 Luke Pendo , E. M. Handberg , V. N. Smelyanskiy , A. G. Petukhov

We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by…

介观与纳米尺度物理 · 物理学 2017-03-17 Yu Wang , Chin-Yi Chen , Gerhard Klimeck , Michelle Y. Simmons , Rajib Rahman

The spin effects at high energies and momenta transferred $|t|>1 GeV^2$ are analysed for quark-photon scattering. The energy independence of the ratio of spin-flip and spin-non-flip amplitudes in the same $\alpha_s$ order of QCD is…

高能物理 - 唯象学 · 物理学 2011-08-17 S. V. Goloskokov , O. A. Listopadov

We present a comprehensive experimental study of the neutral donor to donor-bound exciton transition (D$^0$$\rightarrow\,$D$^0$X) in isotopically enriched $^{28}$Si, focusing on the group-V donors P, As, and Sb under finely tuned uniaxial…

Using a three-dimensional focused-ion beam lithography process we have fabricated nanopillar devices which show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent…

材料科学 · 物理学 2009-11-13 M. C. Wu , A. Aziz , D. Morecroft , M. G. Blamire , M. C. Hickey , M. Ali , G. Burnell , B. J. Hickey