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In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device…

材料科学 · 物理学 2015-06-25 I. N. Hulea , S. Fratini , H. Xie , C. L. Mulder , N. N. Iossad , G. Rastelli , S. Ciuchi , A. F. Morpurgo

We present a theoretical study on the high-field charge transport on the surface of Bi$_2$Se$_3$ and reproduce all the main features of the recent experimental results, i.e., the incomplete current saturation and the finite residual…

介观与纳米尺度物理 · 物理学 2014-09-17 M. Q. Weng , M. W. Wu

A model describing the low density carrier state in an organic single crystal FET with high-$\kappa$ gate dielectrics is studied. The interplay between charge carrier coupling with inter-molecular vibrations in the bulk of the organic…

材料科学 · 物理学 2015-03-17 G. De Filippis , V. Cataudella , S. Fratini , S. Ciuchi

Recent experiments have demonstrated that the performances of organic FETs strongly depend on the dielectric properties of the gate insulator. In particular, it has been shown that the temperature dependence of the mobility evolves from a…

强关联电子 · 物理学 2009-11-13 S. Fratini , A. F. Morpurgo , S. Ciuchi

The contact resistance limits the down-scaling and operating range of OFETs. With the monolayer (1L) organic crystals and non-destructive metal/semiconductor interfaces, intrinsic mobility of 12.5 cm2V-1s-1 and Ohmic contact resistance of…

应用物理 · 物理学 2019-08-06 Boyu Peng , Ho Yuen Lau , Ming Chen , Paddy K. L. Chan

Recently observed Aharonov-Bohm quantum interference of period h/2e in charge density wave rings strongly suggest that correlated density wave electron transport is a cooperative quantum phenomenon. The picture discussed here posits that…

强关联电子 · 物理学 2015-05-30 J. H. Miller , A. I. Wijesinghe , Z. Tang , A. M. Guloy

We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…

其他凝聚态物理 · 物理学 2009-11-10 R. W. I. de Boer , M. E. Gershenson , A. F. Morpurgo , V. Podzorov

Employing a real time effective action formalism we analyze electron transport and current fluctuations in comparatively short coherent conductors in the presence of electron-electron interactions. We demonstrate that, while Coulomb…

介观与纳米尺度物理 · 物理学 2009-11-11 Dmitri S. Golubev , Artem V. Galaktionov , Andrei D. Zaikin

Interfaces formed by two different organic semiconductors often exhibit a large conductivity, originating from transfer of charge between the constituent materials. The precise mechanisms driving charge transfer and determining its…

材料科学 · 物理学 2016-03-01 Yulia Krupskaya , Ignacio Gutiérrez Lezama , Alberto F. Morpurgo

We present the results of precise correlated-electron calculations on the monomer lattices of the organic charge-transfer solids $\kappa$-(BEDT-TTF)$_2$X for 32 and 64 molecular sites. Our calculations are for band parameters corresponding…

强关联电子 · 物理学 2016-05-20 W. Wasanthi De Silva , N. Gomes , S. Mazumdar , R. T. Clay

Electron correlation and quantum interference are pivotal in mesoscopic transport. We theoretically study the nonequilibrium transport dynamics of a triangular triple quantum dot (TTQD) molecule connected to fermionic reservoirs using the…

介观与纳米尺度物理 · 物理学 2026-03-13 Shuo Dong , Junqing Li , Jianhua Wei

We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed…

介观与纳米尺度物理 · 物理学 2010-07-22 Brett W. Scott , Jean-Pierre Leburton

We present a detailed study of the high-current transport properties of graphene devices patterned in a four-point configuration. The current tends to saturate as the voltage across graphene is increased but never reaches the complete…

介观与纳米尺度物理 · 物理学 2015-05-13 Amelia Barreiro , Michele Lazzeri , Joel Moser , Francesco Mauri , Adrian Bachtold

Effect of static charges on charge carrier transport in disordered organic materials is considered. Long range nature of Coulomb interaction requires to take into consideration a finite thickness of the transport layer. Presence of…

无序系统与神经网络 · 物理学 2007-05-23 Sergey Novikov

Computer simulation of the hopping charge transport in disordered organic materials has been carried out explicitly taking into account charge-charge interactions. This approach provides a possibility to take into account dynamic…

无序系统与神经网络 · 物理学 2015-05-13 Sergey V. Novikov

Tunnel transport of interacting spin-polarized electrons through a single-level vibrating quantum dot in external magnetic field is studied. By using density matrix method, the current-voltage characteristics and the dependence of…

介观与纳米尺度物理 · 物理学 2021-03-23 A. D. Shkop , O. M. Bahrova , S. I. Kulinich , I. V. Krive

By considering a correlated two-electron transport process (TET) and using a diagrammatic analysis within the Keldysh nonequilibrium Green's function formalism, we discuss a novel charge pump by which carriers are pumped from a contact with…

介观与纳米尺度物理 · 物理学 2009-11-07 Qing-feng Sun , Hong Guo , Jian Wang

We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift…

材料科学 · 物理学 2009-07-14 I. Gutiérrez Lezama , A. F. Morpurgo

The combined effect of bulk and interface electron-phonon couplings on the transport properties is investigated in a model for organic semiconductors gated with polarizable dielectrics. While the bulk electron-phonon interaction affects the…

强关联电子 · 物理学 2015-05-30 C. A. Perroni , V. Cataudella

Using density functional theory, we determine parameters of tight-binding Hamiltonians for a variety of Fabre charge transfer salts, focusing in particular on the effects of temperature and pressure. Besides relying on previously published…

强关联电子 · 物理学 2013-04-25 A. C. Jacko , H. Feldner , E. Rose , F. Lissner , M. Dressel , Roser Valentí , Harald O. Jeschke
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