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相关论文: Hydrostatic pressure study of single-crystalline U…

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We studied the properties of the antiferromagnetic (AFM) UNi0.5Sb2 (TN \approx 161 K) compound in Sb-flux grown single crystals by means of measurements of neutron diffraction, magnetic susceptibility ({\chi}), specific heat (Cp),…

强关联电子 · 物理学 2015-05-28 M. S. Torikachvili , B. K. Davis , K. Kothapalli , H. Nakotte , A. J. Schultz , E. D. Mun , S. L. Bud'ko

We studied single-crystalline Pr0.5Sr0.5MnO3 by means of measurements of magnetic susceptibility and specific heat at ambient pressure (P), and electrical resistivity (r) in hydrostatic pressures up to 2 GPa. This material displays…

强关联电子 · 物理学 2009-11-13 F. J. Rueckert , M. Steiger , B. K. Davis , T. Huynh , J. J. Neumeier , M. S. Torikachvili

Electrical resistivity \rho(T) of the 5f ferromagnet UGa2 was investigated for single-crystal samples as a function of pressure and magnetic field. The Curie temperature monotonously increases from T$_{C}$ = 124 K under quasi-hydrostatic…

强关联电子 · 物理学 2015-02-18 A. V. Kolomiets , J. -C. Griveau , J. Prchal , A. V. Andreev , L. Havela

We present magnetic and transport properties of PrRh$_{2}$Si$_{2}$ single crystals which exhibit antiferromagnetic order below T$_{N}$ = 68 K. Well defined anomalies due to magnetic phase transition are observed in magnetic susceptibility,…

强关联电子 · 物理学 2009-08-28 V K Anand , Z Hossain , G Behr , G Chen , M Nicklas , C Geibel

We report both experimental and theoretical investigations of the physical properties of Ba$_\mathrm{2}$Mn$_\mathrm{2}$Sb$_\mathrm{2}$O single crystals. This material exhibits a hexagonal structure with lattice constants: a = 4.7029(15)…

强关联电子 · 物理学 2012-12-05 J. Li , C. E. Ekuma , I. Vekhter , M. Jarrell , J. Moreno , S. Stadler , A. B. Karki , R. Jin

The electrical resistivity rho(T) of single crystalline CeCu_5Au under pressure was measured in the temperature range 30mK<T<300K. Pressure suppresses the antiferromagnetic order (T_N=2.35K at ambient pressure) and drives the system into a…

强关联电子 · 物理学 2007-05-23 H. Wilhelm , S. Raymond , D. Jaccard , O. Stockert , H. v. Loehneysen

We report the results of ac and dc magnetic susceptibility (chi) and electrical resistivity (rho) measurements on the single crystals of Er2PdSi3, crystallizing in an AlB2-derived hexagonal structure, for two orientations H//[0001] and…

We report measurements of the temperature-dependent anisotropic resistivity and in-plane magnetoresistance on single crystals of the tetragonal heavy-fermion antiferromagnet (TN = 3.8 K) CeRhIn5. The measurements are reported in the…

强关联电子 · 物理学 2009-11-07 A. D. Christianson , A. Lacerda , M. F. Hundley , P. G. Pagliuso , J. L. Sarrao

We have investigated the magnetic properties of highly anisotropic layered ferromagnetic semiconductor CrI$_3$ in presence of hydrostatic pressure ($P$). At ambient pressure, magnetization exhibits a clear anomaly below 212 K along with a…

We report low-temperature measurements of the electrical resistivity of Yb(Rh1-xCox)2Si2 single crystals with 0 <= x <= 0.12. The isoelectronic substitution of Co on the Rh site leads to a decrease of the unit cell volume which stabilizes…

强关联电子 · 物理学 2010-07-08 S. Friedemann , N. Oeschler , C. Krellner , C. Geibel , F. Steglich

We investigate the effect of hydrostatic pressure on temperature dependence of magnetization and also the influence of magnetic field on linear thermal expansion in polycrystalline Pr0.6Sr0.4MnO3, which is ferromagnetic at room temperature…

材料科学 · 物理学 2018-08-15 Amit Chanda , R. Mahendiran

The DC and AC magnetic susceptibilities of Na0.85CoO2 single crystals were measured for the different crystal orientations of H//(ab)- and H//(c)-axis. The DC-magnetic susceptibility for H//(c)-direction exhibited the antiferromagnetic…

材料科学 · 物理学 2008-04-30 J. S. Rhyee , J. B. Peng , C. T. Lin , S. M. Lee

We present resistivity, specific heat and magnetization measurements in high quality single crystals of HoBi, with a residual resistivity ratio of 126. We find, from the temperature and field dependence of the magnetization, an…

材料科学 · 物理学 2013-09-05 A. Fente , H. Suderow , S. Vieira , N. M. Nemes , M. García-Hernández , S. L. Bud'ko , P. C. Canfield

The magnetic and magnetotransport properties of metallic 1$T$-VTe$_{2}$ single crystals were investigated at temperatures from 1.3 to 300 K and in magnetic fields up to 35 T. Upon applying a high magnetic field, it is found that the…

强关联电子 · 物理学 2021-03-09 Xiaxin Ding , Jie Xing , Gang Li , Luis Balicas , Krzysztof Gofryk , Hai-Hu Wen

The effect of hydrostatic pressure (p<= 1.8 GPa) on the non-Fermi liquid state of U_2Pt_2In is investigated by electrical resistivity measurements in the temperature interval 0.3-300 K. The experiments were carried out on single-crystals…

强关联电子 · 物理学 2009-10-31 P. Estrela , A. de Visser , T. Naka , F. R. de Boer , L. C. J. Pereira

An antiferromagnetic transition is observed in single crystal EuRh2As2 at a high temperature T_N = 47 K compared to the ferromagnetic Weiss temperature theta = 12 K. We show that this is, surprisingly, consistent with mean field theory. A…

强关联电子 · 物理学 2010-11-12 Yogesh Singh , Y. Lee , B. N. Harmon , D. C. Johnston

We carried out simultaneous measurements of electrical resistivity and thermal expansion of the heavy-fermion compound URu2Si2 under pressure using a single crystal. We observed a phase transition anomaly between hidden (HO) and…

强关联电子 · 物理学 2009-11-13 Gaku Motoyama , Nobuyuki Yokoyama , Akihiko Sumiyama , Yasukage Oda

High-pressure electrical resistivity measurements up to 3.0GPa have been performed on EuFe2As2 single crystals with residual resistivity ratios RRR=7 and 15. At ambient pressure, a magnetic / structural transition related to FeAs-layers is…

超导电性 · 物理学 2015-05-19 N. Kurita , M. Kimata , K. Kodama , A. Harada , M. Tomita , H. S. Suzuki , T. Matsumoto , K. Murata , S. Uji , T. Terashima

Electrical resistivity rho, magnetic susceptibility chi, magnetization M and specific heat measurements are reported on a singlecrystalline sample of CePd5Al2, showing successive antiferromagnetic orderings at T_N1=4.1 K and T_N2=2.9 K. The…

We present measurements of the temperature dependence of electrical resistivity of CeRhSn up to ~ 27 kbar. At low temperatures, the electrical resistivity varies linearly with temperature for all pressures, indicating non-Fermi liquid…

强关联电子 · 物理学 2012-07-27 D. A. Zocco , A. Slebarski , M. B. Maple
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