相关论文: Electrical expression of spin accumulation in ferr…

The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry. This approach was used to study the spin-dependent…

Spin transport typically relies on direct manipulation of the spin degree of freedom via magnetic fields, spin-orbit coupling, or engineered spin-dependent potentials. We show theoretically that directional spin currents can arise in a…

We analyze spin-dependent transport through a spin-diode in the presence of spin-flip and under influence of temperature bias. The current polarization and the spin accumulation are investigated in detail by means of reduced density matrix.…

We implement a finite-element scheme that solves the Landau-Lifshitz-Gilbert equation coupled to a diffusion equation accounting for spin-polarized currents. The latter solves for the spin accumulation not only in magnetic materials but…

We study spin-polarized quasiparticle transport in a mesoscopic superconductor with a spin- splitting field in the presence of co-flowing supercurrent. In such a system, the nonequilibrium state is characterized by charge, spin, energy and…

The rise of organic electronics calls for versatile modeling tools. In this context, we develop a semiclassical Boltzmann theory that describes transport and excitonic processes in crystalline organic semiconductors on equal footing. The…

We provide a theory for scanning tunneling microscopy and spectroscopy using a spin-polarized tip. It it shown that the tunneling conductance can be partitioned into three separate contributions, a background conductance which is…

Spin transfer torque and spin pumping are central reciprocal phenomena in spintronics. These phenomena occur in hybrid systems of normal metals and magnets. Spin transfer is the conversion of spin currents in metals to a torque on the…

Transport properties of magnetic multilayers in current perpendicular to the plane of the layers geometry are defined by diffusive scattering in the bulk of the layers, and diffusive and ballistic scattering across the interfaces. Due to…

We present a theory of magnetotransport through an electronic orbital, where the electron spin interacts with a (sufficiently) large external spin via an exchange interaction. Using a semiclassical approximation, we derive a set of…

We compare and contrast magneto-transport oscillations in the fully quantum (single-electron coherent) and classical limits for a simple but illustrative model. In particular, we study the induced magnetization and spin current in a…

We study the spin dependent tunneling of electrons through a zinc-blende semiconductor with the indirect X (or D) minimum serving as the tunneling barrier. The basic difference between tunneling through the G vs. the X barrier is the…

A mesoscopic description of spin-transfer effect is proposed, based on the spin-injection mechanism occurring at the junction with a ferromagnet. The effect of spin-injection is to modify locally, in the ferromagnetic configuration space,…

In the context of spin electronics, the two spin-channel model assumes that the spin carriers are composed of two distinct populations: the conduction electrons of spin up, and the conduction electrons of spin down. In order to distinguish…

Semiclassical solutions of two-dimensional Schrodinger equation with spin-orbit interaction and smooth potential are considered. In the leading order, spin polarization is in-plane and follows the evolution of the electron momentum for a…

Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle…

High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping…

Altermagnets exhibit momentum-dependent spin splitting despite having zero net magnetization. This enables a spin-splitter effect in which an external electric field generates transverse spin currents by separating oppositely polarized…

Due to the spin-orbital coupling in a semiconductor quantum dot, a freely precessing electron spin produces a time-dependent charge density. This creates a sizeable electric field outside the dot, leading to promising applications in…

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a…