相关论文: The Hot-Spot Phenomenon and its Countermeasures in…
We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier…
We present data exhibiting hot spots spontaneously emerging in forward biased thin film photovoltaics based on a-Si:H technology. These spots evolve over time shrinking in their diameter and increasing temperature up to approximately 300…
Modern multiprocessor system-on-chips (SoCs) integrate multiple heterogeneous cores to achieve high energy efficiency. The power consumption of each core contributes to an increase in the temperature across the chip floorplan. In turn,…
The hot-spot phenomenon is a relatively frequent problem occurring in current photovoltaic generators. It entails both a risk for the photovoltaic module's lifetime and a decrease in its operational efficiency. Nevertheless, there is still…
Intrinsic Josephson junctions in high-temperature superconductor Bi2Sr2CaCu2O8 are known for their capability to emit high-power terahertz photons with widely tunable frequencies. Hotspots, as inhomogeneous temperature distributions across…
We have studied experimentally and numerically temperature profiles and the formation of hot spots in intrinsic Josephson junction stacks in Bi2Sr2CaCu2O8 (BSCCO). The superconducting stacks are biased in a state where all junctions are…
A counterclockwise hysteresis is observed at room temperature in the transfer characteristics of SrTiO$_3$ (STO) gated MoS$_2$ field effect transistor (FET) and attributed to bistable dipoles on the STO surface. The hysteresis is expectedly…
A high spatial resolution surface plasmon near field scanning tunneling microscope (STM) has been used to study the properties of localized surface plasmons (SPO) in so-called hot spots on a gold surface, where the local electromagnetic…
We propose a model to explain power dissipation leading to the formation of hot spots in the inner walls of niobium thin film superconducting RF cavities. The physical mechanism that we explore is due to the constriction of surface…
We experimentally studied the dynamics of optically excited hotspots in current carrying WSi superconducting nanowires as a function of bias current, bath temperature and excitation wavelength. We discovered that: (1) the hotspot relaxation…
At high enough input power in stacks of Bi_2Sr_2CaCu_2O8 intrinsic Josephson junctions a hot spot (a region heated to above the superconducting transition temperature) coexists with regions still in the superconducting state. In the…
We use simulations to examine current saturation in sub-micron graphene transistors on SiO2/Si. We find self-heating is partly responsible for current saturation (lower output conductance), but degrades current densities >1 mA/um by up to…
In this work, we examine sheath formation in the presence of bias potentials in the current saturation regime for pulsed power fusion experiments. It is important to understand how the particle and heat fluxes at the wall may impact the…
This paper describes a new and simple approach to accurately characterize the transient self-heating effect in Si-Ge Heterojunction Bipolar Transistors (HBTs), based on pulse measurements and verified through transient electro-thermal…
Highly disordered superconductors, in the magnetic-field-driven insulating state, can show discontinuous current-voltage characteristics. Electron overheating has been shown to give a consistent description of this behavior, but there are…
Experiments on the distributions of switching currents in Josephson junctions are sensitive probes of the mechanism by which a junction changes abruptly to a finite voltage state. At low temperatures data exhibit smooth and gradual…
Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain ($\beta$). In this paper, we characterize lateral bipolar junction transistors (LBJTs) fabricated on silicon-on-insulator…
In this work we have proposed a geometric model that is employed to devise a scheme for identifying the hotspots and zones in a chip. These spots or zone need to be guarded thermally to ensure performance and reliability of the chip. The…
We study arrays of parallel doped semiconductor nanowires in a temperature range where the electrons propagate through the nanowires by phonon assisted hops between localized states. By solving the Random Resistor Network problem, we…
Trapped-ion quantum platforms are subject to `anomalous' heating due to interactions with electric-field noise sources of nature not yet completely known. There is ample experimental evidence that this noise originates at the surfaces of…