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相关论文: Charged Impurity Scattering in Graphene

200 篇论文

We investigate the effects of charged impurity distributions and carrier-carrier interactions on electronic transport in graphene on SiO$_2$ by employing a self-consistent coupled simulation of carrier transport and electrodynamics. We show…

介观与纳米尺度物理 · 物理学 2014-05-21 N. Sule , S. C. Hagness , I. Knezevic

It is a fact that the minimal conductivity $\sigma_0$ of most graphene samples is larger than the well-established universal value for ideal graphene $4e^2/\pi h$; in particular, larger by a factor $\gtrsim\pi$. Despite intense theoretical…

介观与纳米尺度物理 · 物理学 2012-06-29 J. J. Palacios

The electrical conductivity of suspended graphene has recently been measured for the first time, and found to behave as \sigma ~ \sqrt{|n|} as expected for Dirac quasiparticles at large carrier density. The charge inhomogeneity is strongly…

强关联电子 · 物理学 2016-08-14 Joaquín E. Drut , Timo A. Lähde , Eero Tölö

We study charged impurity scattering and static screening in a top-gated substrate-supported graphene nanostructure. Our model describes how boundary conditions can be incorporated into scattering, sheds light on the dielectric response of…

介观与纳米尺度物理 · 物理学 2015-06-05 Zhun-Yong Ong , Massimo V. Fischetti

Introducing quasiparticle anisotropy in graphene via uniaxial strain has a profound effect on the polarization charge density induced by external impurities, both Coulomb and short-range. In particular, the charge distribution induced by a…

介观与纳米尺度物理 · 物理学 2023-12-21 Mohamed M. Elsayed , Sang Wook Kim , Juan M. Vanegas , Valeri N. Kotov

We study carrier transport through graphene on SrTiO$_3$ substrates by considering relative contributions of Coulomb and resonant impurity scattering to graphene resistivity. We establish that charged impurity scattering must dominate…

介观与纳米尺度物理 · 物理学 2012-08-28 S. Das Sarma , Qiuzi Li

Graphene with high carrier mobility \mu\ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor…

介观与纳米尺度物理 · 物理学 2012-03-08 A. K. M. Newaz , Yevgeniy S. Puzyrev , Bin Wang , Sokrates T. Pantelides , Kirill I. Bolotin

The ground-state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and…

介观与纳米尺度物理 · 物理学 2009-12-02 M. M. Fogler

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the…

材料科学 · 物理学 2009-06-10 J. -H. Chen , C. Jang , M. Ishigami , S. Xiao , E. D. Williams , M. S. Fuhrer

We investigate the conductivity $\sigma$ of graphene nanoribbons with zigzag edges as a function of Fermi energy $E_F$ in the presence of the impurities with different potential range. The dependence of $\sigma(E_F)$ displays four different…

介观与纳米尺度物理 · 物理学 2007-08-20 Yan-Yang Zhang , Jiang-Ping Hu , X. C. Xie , W. M. Liu

We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means…

介观与纳米尺度物理 · 物理学 2010-07-30 T. O. Wehling , S. Yuan , A. I. Lichtenstein , A. K. Geim , M. I. Katsnelson

Experimentally produced graphene sheets exhibit a wide range of mobility values. Both extrinsic charged impurities and intrinsic ripples (corrugations) have been suggested to induce long-range disorder in graphene and could be a candidate…

介观与纳米尺度物理 · 物理学 2016-05-13 Zheyong Fan , Andreas Uppstu , Ari Harju

We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and…

介观与纳米尺度物理 · 物理学 2020-03-23 E. H. Hwang , S. Das Sarma

We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged…

介观与纳米尺度物理 · 物理学 2011-10-06 Qiuzi Li , E. H. Hwang , E. Rossi , S. Das Sarma

Charged impurity (CI) scattering is one of the dominant factors that affect the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impurities in suspended graphene. We find that the 2D band intensity…

Using the self-consistent Born approximation to the Dirac fermions under finite-range impurity scatterings, we show that the current-current correlation function is determined by four-coupled integral equations. This is very different from…

强关联电子 · 物理学 2008-06-10 Xin-Zhong Yan , Yousef Romiah , C. S. Ting

Motivated by the experimental measurement of electrical and hall conductivity, thermopower and Nernst effect, we calculate the longitudinal and transverse electrical and heat transport in graphene in the presence of unitary scatterers as…

材料科学 · 物理学 2015-05-19 Vincent Ugarte , Vivek Aji , C. M. Varma

We consider a double-layer system made of two parallel bilayer graphene sheets separated by a dielectric medium. We calculate the finite-temperature electrical conductivity of the first layer due to charged impurities located in two layers.…

介观与纳米尺度物理 · 物理学 2021-03-09 Dang Khanh Linh , Nguyen Quoc Khanh

We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with…

It is shown that clustering of charged impurities on graphene can suppress their contribution to the resistivity by a large factor of about the number of impurities per cluster, while leaving the density dependence unchanged. If the cluster…

介观与纳米尺度物理 · 物理学 2009-05-25 M. I. Katsnelson , F. Guinea , A. K. Geim