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相关论文: Direct observation of excitonic polaron in InAs/Ga…

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We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum dots by using photoluminescence excitation spectroscopy under strong magnetic field. Well defined resonances are observed in the spectra. A…

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled…

光学 · 物理学 2015-06-17 Lei Zhang , Chu-Hsiang Teng , Tyler A. Hill , Leung-Kway Lee , Pei-Cheng Ku , Hui Deng

We observe high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a…

其他凝聚态物理 · 物理学 2009-11-11 A. Gartner , A. W. Holleitner , D. Schuh , J. P. Kotthaus

We report on the observation of the strong coupling regime between a single GaAs quantum dot and a microdisk optical mode. Photoluminescence is performed at various temperatures to tune the quantum dot exciton with respect to the optical…

Photoluminescence spectra measured on a type-II GaSb/GaAs quantum dot ensemble at high excitation power indicate a Mott transition from the low density state comprising of spatially-indirect excitons to a high density electron-plasma state.…

其他凝聚态物理 · 物理学 2009-11-13 Bhavtosh Bansal , M. Hayne , M. Geller , D. Bimberg , V. V. Moshchalkov

Experimental evidence of strong coupling between excitons confined in a quantum well and the photonic modes of a two-dimensional dielectric lattice is reported. Both resonant scattering and photoluminescence spectra at low temperature show…

We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(110) substrates as well as on the {110} sidewall facets of…

介观与纳米尺度物理 · 物理学 2017-08-02 Pierre Corfdir , Ryan B. Lewis , Lutz Geelhaar , Oliver Brandt

We investigated excitonic absorptions in GaAs/AlAs/GaAs single barrier heterostructure using both photocapacitance and photocurrent spectroscopies at room temperature. Photocapacitance spectra show well defined resonance peak of indirect…

介观与纳米尺度物理 · 物理学 2018-02-02 Amit Bhunia , Mohit Kumar Singh , Y. Galvao Gobato , Mohamed Henini , Shouvik Datta

Magneto-photoluminescence measurements of individual zinc-blende GaAs/AlAs core/shell nanowires are reported. At low temperature a strong emission line at 1.507 eV is observed under low power (nW) excitation. Measurements performed in high…

We study spatially indirect excitons of GaAs quantum wells, confined in a 10 microns electrostatic trap. Below a critical temperature of about 1 Kelvin, we detect macroscopic spatial coherence and quantised vortices in the weak…

Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the…

We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs…

介观与纳米尺度物理 · 物理学 2009-11-11 N. I. Cade , H. Gotoh , H. Kamada , H. Nakano , S. Anantathanasarn , R. Noetzel

Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence…

介观与纳米尺度物理 · 物理学 2011-09-27 T. Kazimierczuk , A. Golnik , P. Kossacki , J. Gaj , Z. Wasilewski , A. Babinski

The exciton spin dynamics are investigated both experimentally and theoretically in two-monolayer-thick GaAs/AlAs quantum wells with an indirect band gap and a type-II band alignment. The magnetic-field-induced circular polarization of…

介观与纳米尺度物理 · 物理学 2017-07-14 T. S. Shamirzaev , J. Rautert , D. R. Yakovlev , J. Debus , A. Yu. Gornov , M. M. Glazov , E. L. Ivchenko , M. Bayer

Interacting Bosons, loaded in artificial lattices, have emerged as a modern platform to explore collective manybody phenomena, quantum phase transitions and exotic phases of matter as well as to enable advanced on chip simulators. Such…

介观与纳米尺度物理 · 物理学 2025-12-15 Marco Dusel , Simon Betzold , Oleg A. Egorov , Sebastian Klembt , Jürgen Ohmer , Utz Fischer , Sven Höfling , Christian Schneider

Exciton-polaritons in a microcavity are composite two-dimensional bosonic quasiparticles, arising from the strong coupling between confined light modes in a resonant planar optical cavity and excitonic transitions, typically using excitons…

Polarization-resolved single dot spectroscopy performed on (211)B InAs/GaAs quantum dots reveals that the fine structure splitting of the excitonic levels in these dots is much lower compared to the usual (100)-grown InAs dots.…

We study the photoluminescence (PL) of a two-dimensional liquid of oriented dipolar excitons in In_{x}Ga_{1-x}As coupled double quantum wells confined to a microtrap. Generating excitons outside the trap and transferring them at lattice…

介观与纳米尺度物理 · 物理学 2012-04-17 G. J. Schinner , J. Repp , E. Schubert , A. K. Rai , D. Reuter , A. D. Wieck , A. O. Govorov , A. W. Holleitner , J. P. Kotthaus

Excitons are neutral excitations that are composed of electrons and holes bound together by their attractive Coulomb interaction. The electron and the hole forming the exciton also interact with the underlying atomic lattice, and this…

材料科学 · 物理学 2024-01-18 Zhenbang Dai , Chao Lian , Jon Lafuente-Bartolome , Feliciano Giustino

We investigate polarization properties of neutral exciton emission in single self-assembled InAs/GaAs quantum dots. The in-plane shape and strain anisotropy strongly couple the heavy and light hole states and lead to large optical…

介观与纳米尺度物理 · 物理学 2013-04-18 C. Tonin , R. Hostein , V. Voliotis , R. Grousson , A. Lemaitre , A. Martinez
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