相关论文: Graphene based spin field effect transistor

Graphene with its dispersion relation resembling that of photons offers ample opportunities for applications in electron optics. The spacial variation of carrier density by external gates can be used to create electron waveguides, in…

We theoretically investigate the spin-dependent transport for the system of an armchair-edge graphene nanoribbon (AGNR) between two ferromagnetic (FM) leads with arbitrary polarization directions at low temperatures, where a magnetic…

We propose a spintronic metal oxide semiconductor field effect transistor (spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channel and the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in only one of…

We develop a microscopic theory of the spin Seebeck effect (SSE) at the interface of a bilayer system of a ferromagnetic insulator and graphene. We compare the tunneling spin current at the interface because of the SSE and the spin pumping…

We theoretically study graphene nanoribbons in the presence of spatially varying magnetic fields produced e.g. by nanomagnets. We show both analytically and numerically that an exceptionally large Rashba spin orbit interaction (SOI) of the…

We investigate the electromechanical response of doubly clamped graphene nanoribbons to a transverse gate voltage. An analytical model is developed to predict the field-induced deformation of graphene nanoribbons as a function of field…

The long spin-diffusion length, spin-lifetimes and excellent optical absorption coefficient of graphene provide an excellent platform for building opto-electronic devices as well as spin-based logic in a nanometer regime. In this study, by…

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…

We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…

Electron beam exposure is a commonly used tool for fabricating and imaging graphene-based devices. Here we present a study of the effects of electron-beam irradiation on the electronic transport properties of graphene and the operation of…

Graphene-based electromechanical resonators have attracted much interest recently because of the outstanding mechanical and electrical properties of graphene and their various applications. However, the coupling between mechanical motion…

The paper presents the author view on spin-rooted properties of graphene supported by numerous experimental and calculation evidences. Dirac fermions of crystalline graphene and local spins of graphene molecules are suggested to meet a…

The role of graphene in mediating the exchange interaction is theoretically investigated when it is placed between two ferromagnetic dielectric materials. The calculation based on a tight-binding model illustrates that the magnetic…

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…

We investigate the coupling of spin and thermal currents as a means to rise the thermoelectric efficiency of nanoscale graphene devices. We consider nanostructures composed of overlapping graphene nanoribbons with ferromagnetic contacts in…

In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate…

Magnetic carbon nanostructures are currently under scrutiny for a wide spectrum of applications. Here, we theoretically investigate armchair graphene nanoribbons patterned with asymmetric edge extensions consisting of laterally fused…

We study graphene ferromagnet/superconductor/ferromagnet (F/S/F) nanostructures via a microscopic self-consistent Dirac Bogoliubov-de Gennes formalism. We show that as a result of proximity effects, experimentally accessible spin switching…

We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier…

Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance…