相关论文: Quantum-Hall activation gaps in graphene
Heterostructures formed between two different van der Waals materials enable interactions and functionalities absent in each component. In this work we show that vicinity to an atomically thin WSe$_2$ sheet dramatically impacts the energies…
We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the…
We have studied the fractional quantum Hall states on the surface of a topological insulator thin film in an external magnetic field, where the Dirac fermion nature of the charge carriers have been experimentally established only recently.…
Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of…
We have measured the effective mass ($m^*$) of the four flux composite fermion at Landau level filling factor $\nu = 1/4$ ($^4$CF), using the activation energy gaps at the fractional quantum Hall effect (FQHE) states $\nu$ = 2/7, 3/11, and…
Recent successes in manufacturing of atomically thin graphite samples (graphene) have stimulated intense experimental and theoretical activity. The key feature of graphene is the massless Dirac type of low-energy electron excitations. This…
We study the optical response of a suspended graphene field-effect transistor in magnetic fields of up to 9 T (quantum Hall regime). With an illumination power of only 3 {\mu}W, we measure a photocurrent of up to 400 nA, corresponding to a…
We derive an empirical formula for the width of quantum Hall effect plateaus which is free of adjustable parameters. It describes the integer, fractional and $\nu = 0$ (Wigner insulator) quantum Hall effect in single heterojunctions. The…
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the…
We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that…
In electrical metrology, the quantum Hall effect is accessed at the Landau level filling factor {\nu} = 2 plateau to define and disseminate the unit of electrical resistance (ohm). The robustness of the plateau is only exhibited at this…
We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at…
We study many-body ground states for the partial integer fillings of the $N=1$ Landau level in graphene, by constructing a model that accounts for the lattice scale corrections to the Coulomb interactions. Interestingly, in contrast to the…
The $E = 0$ octet of bilayer graphene in the filling factor range of -4 < $\nu$ < 4 is a fertile playground for many-body phenomena, yet a Landau level diagram is missing due to strong interactions and competing quantum degrees of freedom.…
Quantum Hall plateaus at quarter fillings occur in GaAs wide quantum wells, hole-doped GaAs, and bilayer graphene. However, the interactions favoring incompressible states over compressible composite-Fermi liquids at such fillings are not…
We present a comprehensive study of the band structure of two- and three-dimensional hexagonal layered materials using Landau Level optical Hall effect spectroscopy investigations, employing graphene and graphite as model systems. We study…
The electronic Raman scattering of bulk graphite at zero magnetic field reveals a structureless signal characteristic of a metal. For T<~100 K and B > 2 T, several peaks at energies scaling linearly with magnetic field were observed and…
Measurements in very low disorder two-dimensional electrons confined to relatively wide GaAs quantum well samples with tunable density reveal reentrant $\nu=1$ integer quantum Hall states in the lowest Landau level near filling factors…
We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but…
The recent discovery of fractional quantum Hall states in graphene raises the question of whether the physics of graphene and its bilayer offers any advantages over GaAs-based materials in exploring strongly-correlated states of…