相关论文: Valley-isospin dependence of the quantum Hall effe…
Using the tight-binding approximation and the nonequilibrium Green's function approach, we investigate the coherent spin-dependent transport in planar magnetic junctions consisting of two ferromagnetic (FM) electrodes separated by a…
Valley polarization in graphene breaks inversion symmetry and therefore leads to second-harmonic generation. We present a complete theory of this effect within a single-particle approximation. It is shown that this may be a sensitive tool…
The intrinsic spin and valley Hall conductivities of silicene, germanene and other similar two dimensional crystals are explored theoretically. Particular attention is given to the effects of the intrinsic spin-orbit coupling, electron…
Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers, and static electric or magnetic fields.…
Using high quality graphene pnp junctions, we observe prominent conductance fluctuations on transitions between quantum Hall (QH) plateaus as the top gate voltage Vtg is varied. In the Vtg-B plane, the fluctuations form crisscrossing lines…
We point out the existence of finite charge and spin Hall conductivities of graphene in the presence of a spin orbit interaction (SOI) and localized magnetic impurities. The SOI in graphene results in different transverse forces on the two…
Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which involves the topological electronic states coupled to the AFM order parameter known as the N$\acute{\rm e}$el vector. The control of these states is…
Keldysh nonequilibrium Green's function method is utilized to study theoretically the spin polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential…
We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site…
Using ab initio density functional theory and quantum transport calculations based on nonequilibrium Green's function formalism we study structural, electronic, and transport properties of hydrogen-terminated short graphene nanoribbons…
We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to…
We report a well-resolved 0.7 conductance anomaly at $G = 0.7\times(2e^2/h)$ in bilayer graphene/WSe$_2$ quantum point contacts. Proximity-enhanced spin-orbit coupling splits the four-fold ground state of bilayer graphene into…
We investigate interaction-induced valley domain walls in bilayer graphene in the $\nu=0$ quantum Hall state, subject to a perpendicular electric field that is antisymmetric across a line in the sample. Such a state can be realized in a…
We report on the possibility of valley number fractionalization in graphene with a topological defect that is accounted for in Dirac equation by a pseudomagnetic field. The valley number fractionalization is attributable to an imbalance on…
Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…
It is quite easy to control spin polarization and spin direction of a system via magnetic fields. However, there is no such a direct and efficient way to manipulate valley pseudospin degree of freedom. Here, we demonstrate experimentally…
We show that the conservation of the valley density in multivalley insulators is broken in an unexpected way by the electric field that drives the valley Hall effect. This implies that time-reversal-invariant fully gapped insulators, in…
Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…
We propose a directional switching effect in a metallic device. To such end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be…
An infinite sheet of graphene lying above a perturbed ground plane is studied. The perturbation is a two dimensional ridge, and a bias voltage is applied between the graphene and the ground plane, resulting in a graphene nanoribbonlike…