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相关论文: Electronic Interface Reconstruction at Polar-Nonpo…

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In this paper, we theoretically and experimentally demonstrate a three dimensional metamaterial that can motivate electromagnetic induced transparency (EIT) by using circular polarized wave as stimulations. The unit cell consists of a pair…

经典物理 · 物理学 2017-01-25 Hai Lin , Dong Yang , Song Han , Yangjie Liu , Helin Yang

We theoretically investigate a two-dimensional heterostructure composed of a topological insulator (TI) and a Mott insulator (MI), and clarify what kind of electronic states can be realized at the interface. By using inhomogeneous dynamical…

强关联电子 · 物理学 2013-09-13 Suguru Ueda , Norio Kawakami , Manfred Sigrist

Electronic, lattice, and spin interactions at the interfaces between crystalline complex transition metal oxides can give rise to a wide range of functional electronic and magnetic phenomena not found in bulk. At hetero-interfaces, these…

强关联电子 · 物理学 2017-08-03 S. Koohfar , A. S. Disa , M. Marshall , F. J. Walker , C. H. Ahn , D. P. Kumah

We present a class of holographic models that behave effectively as prototypes of Mott insulators, materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field…

高能物理 - 理论 · 物理学 2017-02-01 Matteo Baggioli , Oriol Pujolas

The objective of electrical impedance tomography (EIT) is to reconstruct the internal conductivity of a physical body based on current and voltage measurements at the boundary of the body. In many medical applications the exact shape of the…

最优化与控制 · 数学 2021-10-25 J. P. Agnelli , V. Kolehmainen , M. Lassas , P. Ola , S. Siltanen

Novel phases of two dimensional electron systems resulting from new surface or interface modified electronic structures have generated significant interest in material science. We utilize photoemission spectroscopy to show that the…

We demonstrate tunable transverse rectification in a density-modulated two-dimensional electron gas (2DEG). The density modulation is induced by two surface gates, running in parallel along a narrow stripe of 2DEG. A transverse voltage in…

介观与纳米尺度物理 · 物理学 2012-11-19 A. Ganczarczyk , S. Rojek , A. Quindeau , M. Geller , A. Hucht , C. Notthoff , D. Reuter , A. D. Wieck , J. König , A. Lorke

Nonlinear response of a Mott insulator to external electric field, corresponding to dielectric breakdown phenomenon, is studied within of a one-dimensional half-filled Hubbard model. It is shown that in the limit of nearly spin polarized…

强关联电子 · 物理学 2012-05-11 Zala Lenarčič , Peter Prelovšek

We address the electronic structure of quantum wells in polar-nonpolar oxide heterojunction systems focusing on the case of non-polar BaVO$_3$ wells surrounded by polar LaTiO$_3$ barriers. Our discussion is based on a density functional…

强关联电子 · 物理学 2009-11-13 C. -C Joseph Wang , Bhagawan Sahu , Hongki Min , Wei-Cheng Lee , Allan H. MacDonald

Controlling exciton recombination in atomically thin semiconductors is central to their optoelectronic functionality, as the competition between radiative and non-radiative decay channels governs emission efficiency. Existing approaches,…

Integral equation theories (IETs) based on the Ornstein-Zernike (OZ) relation can be used as an analytical tool to predict structural and thermodynamic properties and phase behavior of fluids with low numerical cost. However, there are no…

生物物理 · 物理学 2023-09-04 Elena Rufeil Fiori , Adolfo J. Banchio

A Metal-Disordered Mott insulator-Metal heterostructure is studied at half-fiiling using unrestricted Hartree Fock method. The corresponding clean system has been shown to be an insulator for any finite on site correlation. Interestingly we…

强关联电子 · 物理学 2011-03-22 Sanjay Gupta , Tribikram Gupta

The ferroelectric (FE) control of electronic transport is one of the emerging technologies in oxide heterostructures. Many previous studies in FE tunnel junctions (FTJs) exploited solely the differences in the electrostatic potential across…

We consider a heterostructure of a metal and a barrier with onsite correlation at half filling using unrestricted Hartree Fock. We find that above a certain value of correlation strength in the barrier planes, the system is a Mott…

强关联电子 · 物理学 2011-03-22 Sanjay Gupta , Tribikram Gupta

We study the effect of spatial inhomogeneity on the physics of a strongly correlated electron system exhibiting a metallic phase and a Mott insulating phase, represented by the simple Hubbard model. In three dimensions, we consider various…

强关联电子 · 物理学 2015-05-14 Giovanni Borghi , Michele Fabrizio , Erio Tosatti

Motivated by experiments on atomically smooth layers of LaTiO$_3$, a Mott insulator, sandwiched between layers of SrTiO$_3$, a band insulator, a simple model for such heterostructures is studied using quasi one-dimensional lattices and the…

强关联电子 · 物理学 2009-11-11 S. S. Kancharla , E. Dagotto

Electrical Impedance Tomography (EIT) is a non-invasive imaging technique that reconstructs conductivity distributions within a body from boundary measurements. However, EIT reconstruction is hindered by its ill-posed nonlinear inverse…

图像与视频处理 · 电气工程与系统科学 2024-09-11 Bowen Tong , Junwu Wang , Dong Liu

Controlling interfacial interactions in magnetic/topological insulator heterostructures is a major challenge for the emergence of novel spin-dependent electronic phenomena. As for any rational design of heterostructures that rely on…

A fundamental open problem in condensed matter physics is how the dichotomy between conventional and topological band insulators is modified in the presence of strong electron interactions. We show that there are 6 new electronic…

强关联电子 · 物理学 2014-02-10 Chong Wang , Andrew C. Potter , T. Senthil

The emerging interest in two-dimensional electron gases (2DEGs), formed at interfaces between two insulating oxide perovskites poses crucial fundamental question in view of future electronic devices. In the framework of density-functional…

材料科学 · 物理学 2022-03-09 Le Fang , Wahib Aggoune , Wei Ren , Claudia Draxl