MgO 封盖 MnPt 反铁磁薄膜中的电压控制磁各向异性
材料科学
2021-05-12 v2 介观与纳米尺度物理
摘要
采用第一性原理计算研究了 MgO 封盖 MnPt 薄膜中的磁各向异性及其电压调控。磁各向异性随薄膜厚度的急剧变化，尤其在 Pt 端薄膜中，表明其可通过调节薄膜厚度被广泛调谐。在厚膜中，线性电压控制系数在 Pt 端和 Mn 端界面分别高达 1.5 和 pJ/Vm。广泛可调的磁各向异性能与较大的电压控制系数相结合，表明 MgO 封盖 MnPt 薄膜可作为磁存储与反铁磁子应用的通用平台。
引用
@article{arxiv.2008.03249,
title = {Voltage-controlled magnetic anisotropy in antiferromagnetic MgO-capped MnPt films},
author = {P. -H. Chang and W. Fang and T. Ozaki and K. D. Belashchenko},
journal= {arXiv preprint arXiv:2008.03249},
year = {2021}
}
备注
6 pages, 5 figures. This version includes significant revisions after peer review and corrects an error in the values of the VCMA coefficient, which in the original version were mistakenly given with respect to the E-field in vacuum (rather than MgO)