一步法生长的K0.58Fe1.56Se2单晶的上临界场与临界电流密度
超导电性
2011-03-17 v2
摘要
通过新的单步工艺成功合成了K0.58Fe1.56Se2单晶，其超导转变起始温度为31.9 K。X射线衍射图谱表明它们具有高结晶质量和c轴取向。观察到了沿c轴的Fe空位可能存在的调制结构。通过测量磁场沿ab面和c轴方向的情况确定了上临界场，得出的各向异性约为3.3。结果还表明，K0.58Fe1.56Se2在5 K下的临界电流密度约为1.7x10^4 A/cm^2。
引用
@article{arxiv.1103.2904,
title = {Upper fields and critical current density of K0.58Fe1.56Se2 single crystals grown by one step technique},
author = {Zhaoshun Gao and Yanpeng Qi and Lei Wang and Chao Yao and Dongliang Wang and Xianping Zhang and Yanwei Ma},
journal= {arXiv preprint arXiv:1103.2904},
year = {2011}
}
备注
14 pages, 6 figures. The damaged figures (fig.1 and fig.5) during the PDF file conversion were updated in the new version