自旋霍尔效应中的稳态与屏蔽方程
介观与纳米尺度物理
2017-12-19 v3
摘要
在唯象双自旋通道模型框架下讨论了自旋霍尔效应中稳态的表征。研究表明，在自旋霍尔效应中可应用两种不同稳态定义，导致体材料中两种不同类型状态：零横向自旋流或非零纯自旋流。此差异源于对边缘附近区域（发生电荷积累）的处理。推导了描述由自旋轨道耦合引起电荷积累的屏蔽方程。若假设屏蔽长度远小于自旋扩散长度，则与自旋翻转散射相关的自旋积累和由自旋轨道耦合引起的自旋霍尔积累是两个独立效应。相应的输运方程根据Dyakonov-Perel方程进行了讨论。
引用
@article{arxiv.1701.06017,
title = {Stationary states and screening equations in the spin-Hall effect},
author = {Jean-Eric Wegrowe},
journal= {arXiv preprint arXiv:1701.06017},
year = {2017}
}
备注
The work is a pedological presentation of the problem of the stationary states in the spin-Hall effect, in complement to a previously submitted article arXiv :1609.03916v1 [cond-mat.mes-hall] 2016, entitled "Conditions for the generation of spin and charge currents in spin-Hall devices" (Europhys. Lett. 118, 67005 (2017))