Spin Accumulation in the Extrinsic Spin Hall Effect
介观与纳米尺度物理
2009-11-11 v1
摘要
The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is shown that carrier and spin diffusion lengths are modified by the presence of spin-orbit coupling and that spin accumulation due to the extrinsic spin Hall effect is strongly and qualitatively influenced by boundary conditions. Analytical formulas for the spin-dependent carrier recombination rates and inhomogeneous spin densities and currents are presented.
引用
@article{arxiv.cond-mat/0508076,
title = {Spin Accumulation in the Extrinsic Spin Hall Effect},
author = {Wang-Kong Tse and J. Fabian and I. Zutic and S. Das Sarma},
journal= {arXiv preprint arXiv:cond-mat/0508076},
year = {2009}
}
备注
5 pages, 3 figures