中文

KFe$_2$As$_2$单晶的电阻率和上临界场

超导电性 2009-06-11 v2

摘要

我们报告了对KFe2_2As2_2单晶在低至TT = 0.3 K和高达17.5 T磁场下进行的电阻率测量。面内电阻率随TT变化的曲线在降至约50 K时呈凸形,并在约45 K以下表现出T2T^2依赖性。c轴与面内电阻率之比在室温下约为10,在4.2 K时约为40。超导上临界场Bc2(T)B_{c2}(T)已从电阻率数据确定:Bc2abB_{c2}^{ab}(0) = 4.47 T,Bc2cB_{c2}^{c}(0) = 1.25 T。各向异性参数Γ\Gamma = Bc2abB_{c2}^{ab} / Bc2cB_{c2}^{c}TT增加,在TT = TcT_c时为6.8。Bc2ab(T)B_{c2}^{ab}(T)曲线的强曲率表明存在强自旋顺磁效应。

关键词

引用

@article{arxiv.0903.3783,
  title  = {Resistivity and upper critical field in KFe$_2$As$_2$ single crystals},
  author = {Taichi Terashima and Motoi Kimata and Hidetaka Satsukawa and Atsushi Harada and Kaori Hazama and Shinya Uji and Hisatomo Harima and Gen-Fu Chen and Jian-Lin Luo and Nan-Lin Wang},
  journal= {arXiv preprint arXiv:0903.3783},
  year   = {2009}
}

备注

After minor revision, accepted for publication in J. Phys. Soc. Jpn