关于“低密度自旋倾向性及硅倒置层中有效质量的移动电子”评论的回复
强关联电子
2009-11-07 v1 介观与纳米尺度物理
摘要
关于S.V. Kravchenko, A.A. Shashkin, 和V.T. Dolgopolov[cond-mat/0106056]的评论的回复。
引用
@article{arxiv.cond-mat/0206258,
title = {Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"},
author = {V. M. Pudalov and M. Gershenson and H. Kojima and N. Busch and E. M. Dizhur and G. Brunthaler and A. Prinz and G. Bauer},
journal= {arXiv preprint arXiv:cond-mat/0206258},
year = {2009}
}
备注
2 pages, 1 figure