Quantum Hall Effect in a Two-Dimensional Electron System Bent by 90 Degrees
介观与纳米尺度物理
2009-11-10 v2
摘要
Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90 degree corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both co- and counter-propagating edge channels of arbitrary filling factor ratio. We present here 4-point magnetotransport characterization of the corner junction with filling factor combinations which can all be explained using the standard Landauer-Buttiker edge channel picture. The success of this description confirms the realization of a new type of quantum Hall edge geometry.
引用
@article{arxiv.cond-mat/0308557,
title = {Quantum Hall Effect in a Two-Dimensional Electron System Bent by 90 Degrees},
author = {M. Grayson and D. Schuh and M. Bichler and G. Abstreiter and L. Hoeppel and J. Smet and K. von Klitzing},
journal= {arXiv preprint arXiv:cond-mat/0308557},
year = {2009}
}
备注
4 pages, figures included Typographical errors corrected, reference added