基于GaN HEMT的3L ANPC三相逆变器在不同PWM技术下的功率损耗建模
系统与控制
2022-12-13 v1 系统与控制
摘要
本文提出了一种直接的建模方法，用于计算基于GaN HEMT的三相三电平(3L)有源中性点钳位(ANPC)逆变器在不同脉宽调制技术下的功率损耗分布。从交流负载的工作条件与GaN功率器件数据出发，解析计算了每个PWM开关周期平均的导通损耗与开关损耗。所提解析方法的准确性通过基于电路的电力电子仿真工具在不同载波PWM策略上进行了评估。
引用
@article{arxiv.2212.05246,
title = {Power Loss Modelling of GaN HEMT based 3L ANPC Three Phase Inverter for different PWM Techniques},
author = {M. Cacciato and G. Aiello and F. Gennaro and S. Mita and D. Patti and G. Scelba and A. Sujeeth},
journal= {arXiv preprint arXiv:2212.05246},
year = {2022}
}
备注
10 pages, 13 figures, 24th European Conference on Power Electronics and Applications ( IEEE EPE 2022 ECCE Europe). This work has been carried out in the framework of the ECSEL-JU Project GaN4AP (Gallium Nitride for Advanced Power Applications) - Grant Agreement No.101007310