具有40 K转变温度的钾掺杂BaFe2As2超导薄膜
超导电性
2015-05-18 v1
摘要
我们报道了利用非原位脉冲激光沉积技术在Al2O3 (0001)和LaAlO3 (001)衬底上生长钾掺杂BaFe2As2薄膜，其主要载流子为空穴。在Al2O3和LaAlO3上生长的薄膜，测得的Tc分别为40 K和39 K，抗磁性表明薄膜分别在36 K和30 K以下具有良好的体超导特性。两种薄膜的X射线衍射图样均显示出优先的c轴取向，与LaAlO3和Al2O3的衬底结构无关。零温下的上临界场估计约为155 T。
引用
@article{arxiv.1004.4751,
title = {Potassium-doped BaFe2As2 superconducting thin films with a transition temperature of 40 K},
author = {Nam Hoon Lee and Soon-Gil Jung and Dong Ho Kim and Won Nam Kang},
journal= {arXiv preprint arXiv:1004.4751},
year = {2015}
}
备注
6 pages including 3 figures