LaFeAsO$_{1-x}$F$_{x}$薄膜：高上临界场和弱连接行为的证据
超导电性
2010-02-18 v2
摘要
高质量超导LaFeAsOF薄膜生长在单晶LaAlO衬底上，临界温度(起始)高达28 K。在高达40 T的高磁场下的电阻测量揭示了一个顺磁限制的上临界场，(0)约为77 T，并且在附近具有-7.5 T/K的显著陡峭斜率。通过输运测量，我们观察到低磁场下的弱连接行为以及宽可逆区域的证据。
引用
@article{arxiv.0907.2271,
title = {LaFeAsO$_{1-x}$F$_{x}$ thin films: high upper critical fields and evidence of weak link behavior},
author = {S. Haindl and M. Kidszun and A. Kauffmann and K. Nenkov and N. Kozlova and J. Freudenberger and T. Thersleff and J. Haenisch and J. Werner and E. Reich and L. Schultz and B. Holzapfel},
journal= {arXiv preprint arXiv:0907.2271},
year = {2010}
}
备注
4 pages, 4 figures, Phys. Rev. Lett. (accepted)