少层六方氮化硼中声子介导的准粒子寿命重整化
材料科学
2023-08-29 v1
摘要
理解固态系统中准粒子的集体行为是非易失性电子学领域的基础，包括为获得期望的物理现象及其应用而调控多体效应的机会。六方氮化硼（hBN）是一种宽能带隙半导体，作为低维器件异质结构的平台展现出巨大潜力。它是一种惰性介电材料，用于栅极器件，与其他体系接触时具有可忽略的轨道杂化。尽管具有惰性，我们发现少层 hBN 中存在显著的电子质量增强，影响了 能带态的寿命。我们表明该重整化是声子介导的，并且与单声子与多声子散射事件均一致。因此，我们的发现揭示了宽能带隙绝缘体中一个迄今未知的多体态，对以 hBN 为构建模块的器件具有重要启示。
引用
@article{arxiv.2308.13846,
title = {Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride},
author = {Håkon I. Røst and Simon P. Cooil and Anna Cecilie Åsland and Jinbang Hu and Ayaz Ali and Takashi Taniguchi and Kenji Watanabe and Branson D. Belle and Bodil Holst and Jerzy T. Sadowski and Federico Mazzola and Justin W. Wells},
journal= {arXiv preprint arXiv:2308.13846},
year = {2023}
}
备注
This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright $\copyright$ 2022 The Authors, licensed under CC-BY 4.0 after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.3c02086