通过C-V轮廓观察GaAs/InGaP异质结构的I/II相变
材料科学
2009-09-25 v1
摘要
文献中已知，在生长温度范围520-720摄氏度内合成的InGaP合金显示出Cu-Pt晶体有序。该有序性会降低材料的带隙能量。有人预测，由于有序性导致的能级修改会降低InGaP的导带边，从而可能使GaAs/InGaP异质结从类型I带对齐改变为类型II。我们在室温下通过C-V轮廓实验首次观察到此类有序性相关的I/II相变。
引用
@article{arxiv.cond-mat/9903116,
title = {Observation of Type I/II Transition in GaAs/InGaP Heterostructure by C-V Profiling},
author = {Shouvik Datta and M. R. Gokhle and A. P. Shah and T. K. Sharma and B. M. Arora},
journal= {arXiv preprint arXiv:cond-mat/9903116},
year = {2009}
}
备注
2 pages, 3 figures . Submitted to 41st Electronic Materials Conference, (June-July)1999, University of California, Santa Barbara, California