相关论文: Observation of Type I/II Transition in GaAs/InGaP …
Single crystals of XPt$_{5}$P (X = Al, Ga, and In) were grown from a Pt-P solution at high temperatures, and ambient-pressure measurements of temperature-dependent magnetization, resistivity, and X-ray diffraction were made. Also, the…
On the quest for efficient thermoelectrics, semiconducting behavior is a targeted property. Yet, this is often difficult to achieve due to the complex interplay between electronic structure, temperature, and disorder. We find this to be the…
We report on a hierarchy of temperatures Tc < Tgap < Tmet in superconducting Rb1-xFe2-ySe2 observed by THz spectroscopy. Above Tmet = 90 K the material reveals semiconducting characteristics. Below Tmet a coherent metallic THz response…
It is shown that charge ordering in layered crystalline metals causes an increase in the normal state energy of the conducting layers. If this increase in the energy exceeds the difference between the superconducting state energy and the…
Recent experiments discovered an order-disorder transition occuring at low temperatures in large unit 1/1 cell cubic approximants of the stable Cd-based binary alloy quasicrystals. The transition is related to correlations among…
We present a combined experimental and theoretical study of the electronic structure of the intermetallic compound TiGePt by means of photoelectron spectroscopy, x-ray absorption spectroscopy and fullpotential band structure calculations.…
We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages. Temperature dependence of…
In this supporting material for the main paper (the preceding submission), we show, in addition to the related information for the experiments, additional discussion that cannot fit in the main paper (due to the space constraint). It…
The electromagnetic response of a system with two planes per unit cell involves, in addition to the usual intraband contribution, an added interband term. These transitions affect the temperature dependence and the magnitude of the zero…
We report on the structural and superconducting properties of the intermetallic compound BaGaGe. We find that this material undergoes a structural second-order phase transition from the distorted AlB$_2$-type structure (1H, $a$ = 4.3254(2)…
The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…
The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing…
Knowing the electronic structure of a material is essential in energy applications to rationalize its performance and propose alternatives. Materials for thermoelectric applications are generally small-gap semiconductors and should have a…
Infrared optical investigations of $\alpha$-(BEDT-TTF)$_2$I$_3$ have been performed in the spectral range from 80 to 8000~cm$^{-1}$ down to temperatures as low as 10~K by applying hydrostatic pressure. In the metallic state, $T > 135$~K, we…
We report on a study of the electromagnetic response of three different families of high-T_c superconductors that in combination allowed us to cover the whole doping range from under- to overdoped. The discussion is focused on the ab-plane…
The c-axis tunneling properties of both pristine Bi2212 and its HgBr$_2$ intercalate have been measured in the temperature range 4.2 - 250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single…
The nature of the pseudogap phase of cuprate high-temperature superconductors is a major unsolved problem in condensed matter physics. We studied the commencement of the pseudogap state at temperature T* using three different techniques…
We review the contribution of infrared spectroscopy to the study of the pseudogap in high temperature superconductors. The pseudogap appears as a depression of the frequency dependent conductivity in the c-axis direction and seems to be…
We report infrared spectra of a Na$_{0.5}$CoO$_2$ single crystal which exhibits a sharp metal-insulator transition near 50 K due to the formation of charge ordering. In comparison with x=0.7 and 0.85 compounds, we found that the spectral…
Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence…