Nonexponential Relaxations in a Two-Dimensional Electron System in Silicon
强关联电子
2009-11-11 v1 无序系统与神经网络
摘要
The relaxations of conductivity have been studied in a strongly disordered two-dimensional (2D) electron system in Si after excitation far from equilibrium by a rapid change of carrier density n_s at low temperatures T. The dramatic and precise dependence of the relaxations on n_s and T strongly suggests (a) the transition to a glassy phase as T->0, and (b) the Coulomb interactions between 2D electrons play a dominant role in the observed out-of-equilibrium dynamics.
引用
@article{arxiv.cond-mat/0509739,
title = {Nonexponential Relaxations in a Two-Dimensional Electron System in Silicon},
author = {J. Jaroszynski and Dragana Popovic},
journal= {arXiv preprint arXiv:cond-mat/0509739},
year = {2009}
}
备注
5 pages, 5 figures