通过铋-卤化物链的范德瓦耳斯堆叠实现高阶拓扑绝缘体的材料设计
材料科学
2021-02-11 v2
摘要
低维范德瓦耳斯（vdW）材料作为产生奇异量子性质的平台已被广泛研究。推进这一观点，目前大量关注投向具有vdW结构的拓扑量子材料。在此，我们提供一种通过量子自旋霍尔绝缘体（QSHIs）的vdW堆叠设计拓扑材料的新概念。最有趣的是，发现由堆叠改变引起的原胞内反演中心的微小偏移会诱导拓扑从平凡绝缘体到高阶拓扑绝缘体（HOTI）的变异。基于此，我们通过角分辨光电子能谱（ARPES）研究溴化铋Bi4Br4，首次实验实现了HOTI。铋卤化物中仅通过不同堆叠链即可选择多种拓扑的独特性质，结合vdW结构的巨大优势，为面向未来自旋电子学应用而调控拓扑非平凡边缘态提供了迷人的平台。
引用
@article{arxiv.2002.01134,
title = {Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator},
author = {Ryo Noguchi and Masaru Kobayashi and Zhanzhi Jiang and Kenta Kuroda and Takanari Takahashi and Zifan Xu and Daehun Lee and Motoaki Hirayama and Masayuki Ochi and Tetsuroh Shirasawa and Peng Zhang and Chun Lin and Cédric Bareille and Shunsuke Sakuragi and Hiroaki Tanaka and So Kunisada and Kifu Kurokawa and Koichiro Yaji and Ayumi Harasawa and Viktor Kandyba and Alessio Giampietri and Alexei Barinov and Timur K. Kim and Cephise Cacho and Makoto Hashimoto and Donghui Lu and Shik Shin and Ryotaro Arita and Keji Lai and Takao Sasagawa and Takeshi Kondo},
journal= {arXiv preprint arXiv:2002.01134},
year = {2021}
}
备注
Nature Materials, in press. The final version of this article is available online at https://doi.org/10.1038/s41563-020-00871-7