Low-temperature dephasing in disordered conductors: experimental aspects
介观与纳米尺度物理
2017-09-27 v1
摘要
What is the lowest temperature to which one can trace the growth of the dephasing time in low-dimensional conductors? I consider the fundamental limitation, the crossover from weak to strong localization, as well as several experimental reasons for frequently observed saturation of the dephasing time (hot-electron effects, dephasing by external noise). Recent progress in our understanding of the electron-phonon interaction in disordered conductors is also briefly discussed.
引用
@article{arxiv.cond-mat/9908099,
title = {Low-temperature dephasing in disordered conductors: experimental aspects},
author = {Michael Gershenson},
journal= {arXiv preprint arXiv:cond-mat/9908099},
year = {2017}
}
备注
10 pages, 5 figures, uses annalen.cls, presented at Localization-99, to be published in Annalen der Physik