Interface-Induced Electron Spin Splitting in SiGe Heterostructures
介观与纳米尺度物理
2007-05-23 v1
摘要
Spin splitting of conduction electron states has been analyzed for all possible point symmetries of SiGe quantum well structures. A particular attention is paid to removal of spin degeneracy caused by the rotoinversion asymmetry of a (001) heterointerface between two diamond-lattice materials. Consequences of the spin splitting on the electron spin relaxation time is discussed.
引用
@article{arxiv.cond-mat/0302308,
title = {Interface-Induced Electron Spin Splitting in SiGe Heterostructures},
author = {L. E. Golub and E. L. Ivchenko},
journal= {arXiv preprint arXiv:cond-mat/0302308},
year = {2007}
}
备注
3 pages, 1 figure