Interface disorder and layer transitions in Ising thin films
摘要
The disorder and layer transitions in the interface between an Ising spin-1/2 film denoted , and an Ising spin-1 film denoted , are studied using Monte Carlo simulations. The effects of both an external magnetic field, acting only on the spin-1/2 film, and a crystal magnetic field acting only on the spin-1 film, are studied for a fixed temperature and selected values of the coupling constant between the two films. It is found that for large values of the constant , the layers of the film , as well as those of the film , undergo a first order layering transition. On the other hand, the only disordered layer of the film is that one belonging to the interface films , for any values of the crystal field . We show the existence of a critical value of the crystal field , above which this particular layer of the film is disordered. We found that depends on the values of the constant coupling between the two films.
引用
@article{arxiv.cond-mat/0410603,
title = {Interface disorder and layer transitions in Ising thin films},
author = {L. Bahmad and A. Benyoussef},
journal= {arXiv preprint arXiv:cond-mat/0410603},
year = {2015}
}
备注
6 pages Latex, 13 figures Postscript format