中等温度下镁掺杂Al₂O₃晶体的电导率
软凝聚态物质
2009-10-31 v1 材料科学
强关联电子
摘要
利用273至800 K之间的交流和直流电学测量，表征了含[Mg]⁰中心的Al₂O₃:Mg单晶的电导率。在低电场下接触是阻挡的。在高电场下，电流稳定流过样品，I-V特性对应于直接偏置势垒串联体电阻。交流测量给出了结电容和样品电阻的值，并提供了完全可复现的电导率值。电导率随[Mg]⁰浓度线性变化，获得的热激活能为0.68 eV，与先前报道的自由空穴运动的激活能非常吻合。
引用
@article{arxiv.cond-mat/0004123,
title = {Electrical Conductivity in Magnesium-Doped Al_2 O_3 Crystal at Moderate Temperatures},
author = {M. Tardío and R. Ramírez and R. González and Y. Chen and M. R. Kokta},
journal= {arXiv preprint arXiv:cond-mat/0004123},
year = {2009}
}
备注
LaTeX, 6 pages, 3 eps figures included. Contributed Paper to the "International Conference on Defects in Insulating Materials" (ICDIM 2000), Johannesburg, South Africa, 3-7 April, 2000