Doping Induced Magnetization Plateaus
强关联电子
2009-10-31 v1
摘要
The low temperature magnetization process of antiferromagnetic spin-S chains doped with mobile spin-(S-1/2) carriers is studied in an exactly solvable model. For sufficiently high magnetic fields the system is in a metallic phase with a finite gap for magnetic excitations. In this phase which exists for a large range of carrier concentrations x the zero temperature magnetization is determined by x alone. This leads to plateaus in the magnetization curve at a tunable fraction of the saturation magnetization. The critical behaviour at the edges of these plateaus is studied in detail.
引用
@article{arxiv.cond-mat/9907258,
title = {Doping Induced Magnetization Plateaus},
author = {Holger Frahm and Constantin Sobiella},
journal= {arXiv preprint arXiv:cond-mat/9907258},
year = {2009}
}
备注
RevTeX, 4 pp. incl. 3 figures