Circuit with small-capacitance high-quality Nb Josephson junctions
介观与纳米尺度物理
2007-05-23 v2 材料科学
摘要
We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al-)Al_2O_3/Nb trilayer, we have fabricated a Nb single-electron transistor (SET), and characterized the SET at low temperatures, T=0.04-40 K. The superconducting gap energy and the transition temperature of the Nb SET agree with the bulk values, which suggests high quality Nb junctions. The single-electron charging energy of the SET is estimated to be larger than 1 K.
引用
@article{arxiv.cond-mat/0311332,
title = {Circuit with small-capacitance high-quality Nb Josephson junctions},
author = {Michio Watanabe and Yasunobu Nakamura and Jaw-Shen Tsai},
journal= {arXiv preprint arXiv:cond-mat/0311332},
year = {2007}
}
备注
Published version, RevTeX4