We report our progress in the high-temperature superconductor (HTS) Josephson junction fabrication process founded on using a focused helium ion beam damaging technique and discuss the expected device performance attainable with the HTS multi-junction device technology. Both the achievable high value of characteristic voltage Vc=IcRN of Josephson junctions and the ability to design a large number of arbitrary located Josephson junctions allow narrowing the existing gap in design abilities for LTS and HTS circuits even with using a single YBCO film layer. A one-layer topology of active electrically small antenna is suggested and its voltage response characteristics are considered.
@article{arxiv.2404.12767,
title = {On the Path to High-temperature Josephson Multi-junction Devices},
author = {Xu Wang and Fucong Chen and Zefeng Lin and Changhong Yuan and Shibing Tian and Chunguang Li and Victor Kornev and Nikolay Kolotinskiy},
journal= {arXiv preprint arXiv:2404.12767},
year = {2024}
}