中文

Mott-Hubbard与电荷转移体系芯能级光电子能谱中的体屏蔽

强关联电子 2007-05-23 v2 超导电性

摘要

我们报道了单晶V1.98_{1.98}Cr0.02_{0.02}O3_{3}和高TcT_c铜氧化物Bi2_2Sr2_{2}CaCu2_{2}O8+δ_{8+\delta} (Bi2212)的体敏感硬X射线(hνh\nu = 5.95 KeV)芯能级光电子能谱(PES)。V1.98_{1.98}Cr0.02_{0.02}O3_{3}在金属相中表现出低结合能的V 2p2p“主谱线”的“卫星峰”,这些卫星峰在反铁磁绝缘体相中被抑制。相比之下,Bi2212的Cu 2p2p谱未显示温度依赖特征,但与软X射线PES的比较表明,体相中2p53d92p^5 3d^9“卫星峰”或3d93d^9权重大幅增加。包含完整多重态结构以及源自费米能级相干带屏蔽通道的团簇模型计算,与实验结果非常吻合。

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引用

@article{arxiv.cond-mat/0404200,
  title  = {Bulk screening in core level photoemission from Mott-Hubbard and Charge-Transfer systems},
  author = {M. Taguchi and A. Chainani and N. Kamakura and K. Horiba and Y. Takata and E. Ikenaga and T. Yokoya and S. Shin and K. Kobayashi and K. Tamasaku and Y. Nishino and D. Miwa and M. Yabashi and T. Ishikawa and T. Mochiku and K. Hirata and K. Motoya},
  journal= {arXiv preprint arXiv:cond-mat/0404200},
  year   = {2007}
}