带新型集成偏置电阻的交流耦合GaAs微条探测器
仪器与探测器
2009-10-30 v1
摘要
在3英寸衬底晶圆上制备了具有集成耦合电容和偏置电阻的全尺寸单面GaAs微条探测器。采用PECVD沉积的SiO_2和SiO_2/Si_3N_4层分别提供32.5 pF/cm和61.6 pF/cm的耦合电容。电阻采用溅射CERMET并通过简单的lift-off工艺制成。78 kOhm/sq.的方块电阻和小于4x10^-3 /°C的温度系数满足在小面积偏置电阻上宽温度范围工作的要求。
引用
@article{arxiv.physics/9709041,
title = {AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors},
author = {R. Irsigler and R. Geppert and R. Goeppert and M. Hornung and J. Ludwig and M. Rogalla and K. Runge and Th. Schmid and A. Soldner-Rembold and M. Webel and C. Weber},
journal= {arXiv preprint arXiv:physics/9709041},
year = {2009}
}
备注
20 pages, 9 figures, to be published in NIM A