Related papers: Mechanical Dissipation in Silicon Flexures
Interferometric gravitational wave detectors use mirrors whose substrates are formed from materials of low intrinsic mechanical dissipation. The two most likely choices for the test masses in future advanced detectors are fused silica or…
We cool the fundamental mechanical mode of an ultrasoft silicon cantilever from a base temperature of 2.2 K to 2.9 +/- 0.3 mK using active optomechanical feedback. The lowest observed mode temperature is consistent with limits determined by…
We report a thermo-optical bistability observed in silicon micro-cantilevers irradiated by a laser beam with mW powers: reflectivity, transmissivity, absorption, and temperature can change by a factor of two between two stable states for…
The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa.
Scintillation characteristics of a thallium doped sodium iodide (NaI(Tl)) crystal with a dimension of 0.6 x 0.6 x 2 cm3 are studied by attaching a silicon photomultiplier (SiPM) direct to the crystal over a temperature range from 93 to 300…
In this letter, we present the direct loss tangent measurement of a high-resistivity intrinsic (100) silicon wafer in the temperature range from ~ 70 mK to 1 K, approaching the quantum regime. The measurement was performed using a technique…
Ionic structure of high pressure, high temperature fluids is a challenging theoretical problem with applications to planetary interiors and fusion capsules. Here we report a multi-messenger platform using velocimetry and \textit{in situ}…
The dynamics of the luminescence decay from germanium nanocrystals embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. At room temperature the characteristic decay time is of the order…
Optical measurements of a nanoscale silicon optomechanical crystal cavity with a mechanical resonance frequency of 3.6GHz are performed at sub-kelvin temperatures. We infer optical-absorption-induced heating and damping of the mechanical…
5$\mu$m thick SmCo films were deposited onto Si substrates using triode sputtering. A study of the influence of deposition temperature (Tdep <= 600 degrees C) on the structural, magnetic and mechanical properties has shown that optimum…
High-reflectivity fused silica mirrors are at the epicentre of current advanced gravitational wave detectors. In these detectors, the mirrors interact with high power laser beams. As a result of finite absorption in the high reflectivity…
Electrical transport measurements were made on single-crystal Sn nanowires to understand the intrinsic dissipation mechanisms of a one-dimensional superconductor. While the resistance of wires of diameter larger than 70 nm drops…
Flexoelectricity, an electromechanical coupling between strain gradient and polarization, offers a promising dimension to enrich silicon-based devices. Although the flexoelectricity of silicon is known, some fundamental aspects remain…
We systematically investigated the physical properties of amorphous Mo$_{\rm x}$Si$_{1-x}$ films deposited by the magnetron co-sputtering technique. The critical temperature $T_C$ of Mo$_{\rm x}$ Si$_{1-x}$ films increases gradually with…
We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our…
We have measured the dissipation and frequency of nanocrystalline-diamond nanomechanical resonators with resonant frequencies between 13.7 MHz and 157.3 MHz, over a temperature range of 1.4-274 K. Using both magnetomotive network analysis…
The focus of this paper is the vanishing of the thermal expansion in certain diamond-like semiconductors. In silicon becomes zero at T = 122. K. In germanium the situation is less clear. Previous investigations show that in natural…
Ductile Regime Machining of semiconductors (DRM) offers higher quality of the resulting surfaces. To optimize this process, it is required to understand the thermal kinetics of silicon metallization under pressure. Such understanding is not…
Micro and nanomechanical resonators with ultra-low dissipation have great potential as useful quantum resources. The superfluid micromechanical resonators presented here possess several advantageous characteristics: straightforward…
We report here on measurements of the reflectivity and loss tangent measured in the W-band (80-125 GHz) and D-band (125-180 GHz) in two samples of float zone silicon with intrinsic stoichiometry - one irradiated by neutrons, which increases…