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Related papers: Mechanical Dissipation in Silicon Flexures

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Silicon wafer and multilayer-coated mirror samples were exposed to impact of drops of molten tin to examine the adhesion behavior and cleaning possibilities. The sticking of tin droplets to horizontal substrates was examined for different…

Applied Physics · Physics 2019-09-04 Norbert Böwering , Christian Meier

Current interferometric gravitational wave detectors use test masses with mirror coatings formed from multiple layers of dielectric materials, most commonly alternating layers of SiO2 (silica) and Ta2O5 (tantala). However, mechanical loss…

We report the successful growth of high quality single crystals of LiFeAs with lateral sizes up to 5 x 5 mm2 by the Sn-flux method. Electrical resistivity studies reveal that the superconducting onset temperature is 18.2 K with a transition…

Superconductivity · Physics 2010-10-20 Bumsung Lee , Seunghyun Khim , Jung Soo Kim , G. R. Stewart , Kee Hoon Kim

This article identifies the process of crystallization of thin high-$\kappa$ dielectric films and an optimal range of annealing temperature in the field of high-$\kappa$ dielectric-based metal-oxide-semiconductor (MOS) technology for its…

Materials Science · Physics 2019-10-02 Debaleen Biswas , Anil Kumar Sinha , Supratic Chakraborty

The performance of the $200\times2.5\times1$ cm$^3$ plastic scintillator strip with wavelength shifting fiber read-out by two novel photodetectors called Silicon PhotoMultipliers (SiPMs) is discussed. The advantages of SiPM relative to the…

Instrumentation and Detectors · Physics 2009-11-11 V. Balagura , M. Danilov , B. Dolgoshein , S. Klemin , R. Mizuk , P. Pakhlov , E. Popova , V. Rusinov , E. Tarkovsky , I. Tikhomirov

Superconducting magnesium diboride films with Tc0 ~ 24 K and sharp transition \~ 1 K were successfully prepared on silicon substrates by pulsed laser deposition from a stoichiometric MgB2 target. Contrary to previous reports, anneals at 630…

Superconductivity · Physics 2009-11-07 H. Y. Zhai , H. M. Christen , L. Zhang , C. Cantoni , M. Paranthaman , B. C. Sales , D. K. Christen , D. H. Lowndes

We characterize heat dissipation of supported molybdenum disulfide (MoS$_2$) monolayers grown by chemical vapor deposition by means of ambient-condition scanning thermal microscopy (SThM). We find that the thermal boundary conductance of…

We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 F. Lefloch , D. Quirion , M. Sanquer

AC susceptibility measurements are presented on the dilute, dipolar coupled, Ising magnet LiHo$_x$Y$_{1-x}$F$_4$ for a concentration $x = 0.045$. The frequency and temperature dependences of the susceptibility show characteristic glassy…

Disordered Systems and Neural Networks · Physics 2011-12-01 J. A. Quilliam , S. Meng , C. G. A. Mugford , J. B. Kycia

We report on a systematic study of nanomechanical dissipation in high-frequency (approximatively 300 MHz) gallium arsenide optomechanical disk resonators, in conditions where clamping and fluidic losses are negligible. Phonon-phonon…

Highly segmented calorimeters represent a modern trend in experimental particle physics aimed at improving the energy resolution with the particle flow reconstruction. The widely used and cost-effective solution is the structure assembled…

Instrumentation and Detectors · Physics 2025-06-11 M. Chadeeva , A. Stifutkin

We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149K, relative to their performance in the absence of an external electric field. The…

Instrumentation and Detectors · Physics 2018-10-17 X. L. Sun , T. Tolba , G. F. Cao , P. Lv , L. J. Wen , A. Odian , F. Vachon , A. Alamre , J. B. Albert , G. Anton , I. J. Arnquist , I. Badhrees , P. S. Barbeau , D. Beck , V. Belov , T. Bhatta , F. Bourque , J. P. Brodsky , E. Brown , T. Brunner , A. Burenkov , L. Cao , W. R. Cen , C. Chambers , S. A. Charlebois , M. Chiu , B. Cleveland , M. Coon , M. Côté , A. Craycraft , W. Cree , J. Dalmasson , T. Daniels , L. Darroch , S. J. Daugherty , J. Daughhetee , S. Delaquis , A. Der Mesrobian-Kabakian , R. DeVoe , J. Dilling , Y. Y. Ding , M. J. Dolinski , A. Dragone , J. Echevers , L. Fabris , D. Fairbank , W. Fairbank , J. Farine , S. Feyzbakhsh , P. Fierlinger , R. Fontaine , D. Fudenberg , G. Gallina , G. Giacomini , R. Gornea , G. Gratta , E. V. Hansen , D. Harris , M. Heffner , E. W. Hoppe , J. Hößl , A. House , P. Hufschmidt , M. Hughes , Y. Ito , A. Iverson , A. Jamil , C. Jessiman , M. J. Jewell , X. S. Jiang , A. Karelin , L. J. Kaufman , D. Kodroff , T. Koffas , S. Kravitz , R. Krücken , A. Kuchenkov , K. S. Kumar , Y. Lan , A. Larson , D. S. Leonard , G. Li , S. Li , Z. Li , C. Licciardi , Y. H. Lin , R. MacLellan , T. Michel , M. Moe , B. Mong , D. C. Moore , K. Murray , R. J. Newby , Z. Ning , O. Njoya , F. Nolet , O. Nusair , K. Odgers , M. Oriunno , J. L. Orrell , G. S. Ortega , I. Ostrovskiy , C. T. Overman , S. Parent , A. Piepke , A. Pocar , J. -F. Pratte , D. Qiu , V. Radeka , E. Raguzin , T. Rao , S. Rescia , F. Retière , A. Robinson , T. Rossignol , P. C. Rowson , N. Roy , R. Saldanha , S. Sangiorgio , S. Schmidt , J. Schneider , D. Sinclair , K. Skarpaas VIII , A. K. Soma , G. St-Hilaire , V. Stekhanov , T. Stiegler , M. Tarka , J. Todd , T. I. Totev , R. Tsang , T. Tsang , B. Veenstra , V. Veeraraghavan , G. Visser , J. -L. Vuilleumier , M. Wagenpfeil , Q. Wang , J. Watkins , M. Weber , W. Wei , U. Wichoski , G. Wrede , S. X. Wu , W. H. Wu , Q. Xia , L. Yang , Y. -R. Yen , O. Zeldovich , J. Zhao , Y. Zhou , T. Ziegler

The electrical conductance of molecular beam epitaxial Bi on BaF2(111) was measured as a function of both film thickness (4-540 nm) and temperature (5-300 K). Unlike bulk Bi as a prototype semimetal, the Bi thin films up to 90 nm are found…

Mesoscale and Nanoscale Physics · Physics 2015-06-03 Shunhao Xiao , Dahai Wei , Xiaofeng Jin

The increasing scale of cryogenic detector arrays for sub-millimeter and millimeter wavelength astrophysics has led to the need for large aperture, high index of refraction, low loss, cryogenic refracting optics. Silicon with n = 3.4, low…

Size effects on vibrational modes in complex crystals remain largely unexplored, despite their importance in a variety of electronic and energy conversion technologies. Enabled by advances in a four-probe thermal transport measurement…

A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a…

Strongly Correlated Electrons · Physics 2009-11-10 Yeekin Tsui , S. A. Vitkalov , M. P. Sarachik , T. M. Klapwijk

Thermoelastic loss is an important energy dissipation mechanisms in resonant systems. A careful analysis of the thermoelastic loss is critical to the design of low-noise devices for high-precision applications, such as the mirrors used for…

Materials Science · Physics 2023-06-27 Ruinan Zhou , Manel Molina-Ruiz , Frances Hellman

We have compiled measurements of the mechanical loss in fused silica from samples spanning a wide range of geometries and resonant frequency in order to model the known variation of the loss with frequency and surface-to-volume ratio. This…

General Relativity and Quantum Cosmology · Physics 2015-06-25 Steven D. Penn , Alexander Ageev , Dan Busby , Gregory M. Harry , Andri M. Gretarsson , Kenji Numata , Phil Willems

In recent years there has been considerable interest in exploiting the temperature dependence of sapphire whispering gallery mode frequency to develop a mechanically stable, high accuracy temperature sensor. Disk-resonator-based devices…

Ultra-thin crystal targets in shape of self-supporting membranes were produced for our experiments with parametric x-rays emitted by low-energy electrons. Concise description of the technology developed for production of silicon crystal…

Instrumentation and Detectors · Physics 2007-05-23 V. B. Vyssotsky , E. V. Lobko , A. S. Lobko
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