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On melting of silicon carbide under pressure

Materials Science 2012-10-12 v1
Authors: Petr S. Sokolov , Vladimir A. Mukhanov , Thierry Chauveau , Vladimir L. Solozhenko
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Abstract

The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa.

Keywords

silicon carbide melting curve high pressure congruent melting phase diagram

Cite

@article{arxiv.1210.3244,
  title  = {On melting of silicon carbide under pressure},
  author = {Petr S. Sokolov and Vladimir A. Mukhanov and Thierry Chauveau and Vladimir L. Solozhenko},
  journal= {arXiv preprint arXiv:1210.3244},
  year   = {2012}
}

Comments

5 pages, 2 figures

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