Related papers: Mechanical Dissipation in Silicon Flexures
Silicon, despite its abundance and high energy density, remains underexplored as a carbon-free fuel, with limited data available on its combustion characteristics. In this work, the combustion behaviour of silicon particles is examined…
We apply spinning-disc picometrology to measure the complex refractive index of graphene on thermal oxide on silicon. The refractive index varies from n = 2.4-1.0i at 532 nm to n = 3.0-1.4i at 633 nm at room temperature. The dispersion is…
The magnetization relaxation rate of small gamma-Fe2O3 particles dispersed in a silica matrix has been measured from 60 mK to 5 K. It shows a minimum around 150 mK, that can be discussed in terms of either thermal or quantum relaxation…
For the construction of the ATLAS Inner Tracker strip detector, silicon strip sensor modules are glued directly onto carbon fibre support structures using a soft silicone gel. During tests at temperatures below \unit[-35]{$^{\circ}$C},…
We present a scanning probe technique for measuring the dynamics of individual fluxoid transitions in multiply connected superconducting structures. In these measurements, a small magnetic particle attached to the tip of a silicon…
Single-crystalline silicon is well known to be a poor thermoelectric material due to its high thermal conductivity. Most excellent research has focused on ways to decrease its thermal conductivity while retaining acceptably large power…
Optical resonators are increasingly important tools in science and technology. Their applications range from laser physics, atomic clocks, molecular spectroscopy, and single-photon generation to the detection, trapping and cooling of atoms…
Extensive Monte Carlo simulations are carried out to study thermal stability of an infinite standalone silicon sheet. We used the Tersoff potential that has been used with success for silicon at low temperatures. However, the melting…
Resonance modes in single crystal sapphire ($\alpha$-Al$_2$O$_3$) exhibit extremely high electrical and mechanical Q-factors ($\approx 10^9$ at 4K), which are important characteristics for electromechanical experiments at the quantum limit.…
We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…
Nanostructured silicon is a promising material for thermoelectric conversion, because the thermal conductivity in silicon nanostructures can be strongly reduced with respect to that of bulk materials. We present thermal conductivity…
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and…
We investigate bulk superconductivity in a high-quality single crystal of Bi$_2$Pd ($\beta$-Bi$_2$Pd, space group; I4/mmm) at temperatures less than 5.4 K by exploring its electrical resistivity, magnetic susceptibility, and specific heat.…
We characterize the mechanical quality factor of micro-oscillators covered by a highly reflective coating. We test an approach to the reduction of mechanical losses, that consists in limiting the size of the coated area to reduce the strain…
The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance ($G$) of n-type silicon eventually…
We have studied diffusion pathways of a silyl radical adsorbed on the hydrogenated Si (100)-(2x1) surface by density-functional theory. The process is of interest for the growth of crystalline silicon by plasma-enhanced chemical vapor…
Molecular hydrogen in silicon has been studied by path-integral molecular dynamics simulations in the canonical ensemble. Finite-temperature properties of these point defects were analyzed in the range from 300 to 900 K. Interatomic…
Amorphous Si (a-Si) nanostructures are ubiquitous in numerous electronic and optoelectronic devices. Amorphous materials are considered to possess the lower limit to the thermal conductivity (k), which is ~1 W/m-K for a-Si. However, recent…
Silicon is a key semiconducting material for electrical devices and hybrid quantum systems where low temperatures and zero-spin isotopic purity can enhance quantum coherence. Electrical conductivity in Si is characterised by carrier freeze…
Multilayer graphene (MLG) thin films are deposited on silicon oxide substrates by mechanical exfoliation (or 'scotch-tape method') from Kish graphite. The thickness and number of layers are determined from both Atomic Force Microscopy (AFM)…